p-Type doping of SiC by high dose Al implantation—problems and progress

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

“…Heera et al 7 used an ion-implantation method to increase the carrier density. Although the doping layers with high concentration (Ͼ10 20 cm Ϫ3 ) were formed, crystal defects were introduced during ion implantation, and a high-temperature annealing step was needed to recover the damaged layers.…”

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

“…Al or N impurities are the best for p or n-type doping in SiC [39,40]. Therefore, we choose to implant them into SiC to introduce free holes/electrons, which can also realize defect-induced ferromagnetism at the same time.…”

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

“…While bipolar devices mainly utilize 4H-SiC p-n junctions, unipolar devices use p-n junctions both within the active region (to control the electric field distribution) and at the edges of the devices (to reduce electric-field crowding) (Baliga, 2005). In a p-type region, very high doping is necessary since common acceptors have deep energy levels (B: 0.3 eV; Al: 0.2 eV) (Heera et al, 2001). Boron is known to exhibit complex diffusion behaviour , while aluminum has extremely low diffusivity (Heera et al, 2001).…”

“…In a p-type region, very high doping is necessary since common acceptors have deep energy levels (B: 0.3 eV; Al: 0.2 eV) (Heera et al, 2001). Boron is known to exhibit complex diffusion behaviour , while aluminum has extremely low diffusivity (Heera et al, 2001). Precise modeling of boron diffusion and aluminum-ion implantation is therefore crucial for developing high-performance 4H-SiC power devices.…”