Interaction between magnetic moments and itinerant carriers in 
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 ferromagnetic SiC

Liu, Yu; Yuan, Ye; Liu, Fang; Böttger, Roman; Anwand, W.; Wang, Yutian; Семисалова, А.С.; Ponomaryov, A. N.; Lu, Xia; N’Diaye, Alpha T.; Arenholz, Elke; Heera, V.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

doi:10.1103/physrevb.95.195309

Cited by 13 publications

(7 citation statements)

References 60 publications

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“…Based on the results of Eu, we further carried out XANES and XMCD measurements at the In L 3 -edge, which should be feasible even though In is not a magnetic element. In previous reports magnetic moments have for example been found to originate from the p z orbitals of carbon atoms around divacancies in noble gas implanted SiC 56,57 , as well as ferromagnetism in Si which arises from 3s*3p* hybridized states of V6 (hexagonal ring constituted by six silicon single vacancies) 58 has been demonstrated after neutron irradiation.…”

Section: Distribution Of Magnetic Moments At the Interfacementioning

confidence: 91%

Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Liu

Luchini

Martí‐Sánchez

et al. 2019

ACS Appl. Mater. Interfaces

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Hybrid semiconductor -ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor -ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the bandgap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs. Induced moments in the adjacent InAs layers were not detected although our ab initio calculations indicate a small exchange field in the InAs layer. This work presents a step towards realizing high quality semiconductor -ferromagnetic insulator hybrids, which is a critical requirement for development of various quantum and spintronic applications without external magnetic fields.

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Section: Distribution Of Magnetic Moments At the Interfacementioning

confidence: 91%

Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Liu

Luchini

Martí‐Sánchez

et al. 2019

ACS Appl. Mater. Interfaces

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“…Both ferromagnetism and V Si were detected in the sample, supporting the first-principles calculations. However, in another work, N implantation induced much weaker magnetism than Al implantation in 4H-SiC [78].…”

Section: Coupling Mechanism (First-principles Calculations)mentioning

confidence: 87%

“…For SiC, one can implant Al or N dopants to create carriers and defects simultaneously. In [78], the authors investigated magnetic and transport properties in ferromagnetic 4H-SiC single crystals prepared by post-implantation pulsed laser annealing. The implantation energies for Al and N were 180 keV and 110 keV, respectively.…”

Section: Spintronicsmentioning

confidence: 99%

Defect-induced magnetism in SiC

Zhou

Chen

2019

J. Phys. D: Appl. Phys.

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Defect induced magnetism, which can be controllably generated by ion or neutron irradiation, is attracting intensive research interest. It not only challenges the traditional opinions about magnetism, but also has some potential applications in spin-electronics. SiC is a new candidate for the investigation of defect-induced ferromagnetism after graphitic materials and oxides due to its high material purity and crystalline quality [1, 2]. In this contribution, we made a comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC samples. In combination with X-ray absorption spectroscopy, high-resolution transmission electron microscopy and first-principles calculations, we try to understand the mechanism in a microscopic picture. For neon or xenon ion implanted SiC, we identify a multi-magnetic-phase nature [3]. The magnetization of SiC can be decomposed into paramagnetic, superparamagnetic and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. By combining X-ray magnetic circular dichroism and first-principles calculations, we clarify that p-electrons of the nearest-neighbor carbon atoms around divacancies are mainly responsible for the long-range ferromagnetic coupling [4]. Thus, we provide a correlation between the collective magnetic phenomena and the specific electrons/orbitals. With the aim to verify if a sample containing defects through its bulk volume can persist ferromagnetic coupling, we applied neutron irradiation to introduce defects into SiC [5]. Besides a weak ferromagnetic contribution, we observe a strong paramagnetism, scaling up with the neutron fluence. The ferromagnetic contribution only occurs in a narrow fluence window or after annealing. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Although both Raman scattering and X-ray diffraction reveal essential structure damage to SiC due to irradiation, high-resolution transmission electron microscopy does not detect significant structural variation even upon the largest neutron fluence.

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“…However, there are unpaired spins in the 5p orbital for Te, but these electrons tend to be less localized than inner shell d-electrons. More recently, others [42][43][44][45] have attributed ferromagnetism in materials without magnetic ions to lattice or bond defects and referred to this as d 0 ferromagnetism. Schoenhalz, et al 46 used total energy calculations to demonstrate that the long-range magnetic interactions in undoped ZnO nanostructures are related to extended defects such as surfaces whereas Mal, et al 47 have attributed FM in undoped ZnO to oxygen vacancies.…”

Section: Electron Energy Loss Spectroscopy Measurements(eels) Monochmentioning

confidence: 99%

“…More recently, Ruiz, et al performed magnetic measurements on single FeSi nanowires and associate the presence of ferromagnetism to an interaction between charge carriers and dangling bonds on the NW surface 48 . One of the most relevant investigations to our doping dependent FM in GaAsSb nanowires is that reported by Liu, et al 49 in which they explore the interaction between magnetic moments and itinerate carriers in d 0 4H-SiC single crystals that are ferromagnetic. They used Al and N ion implantation into the semi-insulating SiC to generate p-and n-type free carriers and defects and www.nature.com/scientificreports www.nature.com/scientificreports/ suggest that the magnetic moments are related to the C p orbitals.…”

Section: Electron Energy Loss Spectroscopy Measurements(eels) Monochmentioning

confidence: 99%

Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires

Kumar

Liu

et al. 2020

Sci Rep

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Intrinsic and Te-doped GaAsSb nanowires with diameters ~100-120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE). Detailed magnetic, current/voltage and lowenergy electron energy loss spectroscopy measurements were performed to investigate the effect of Te-doping. While intrinsic nanowires are diamagnetic over the temperature range 5-300 K, the Te-doped nanowires exhibit ferromagnetic behavior with the easy axis of magnetism perpendicular to the longitudinal axis of the nanowire. The temperature dependence of coercivity was analyzed and shown to be in agreement with a thermal activation model from 50-350 K but reveal more complex behavior in the low temperature regime. The EELS data show that Te doping introduced a high density of states (DOS) in the nanowire above the Fermi level in close proximity to the conduction band. The plausible origin of ferromagnetism in these Te-doped GaAsSb nanowires is discussed on the basis of d 0 ferromagnetism, spin ordering of the Te dopants and the surface-state-induced magnetic ordering.

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Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

Cited by 13 publications

References 60 publications

Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Defect-induced magnetism in SiC

Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires

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