p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia, D.; Kubiszyn, Lkasz; Michalczewski, Krystian; Keblwski, Artur; Martyniuk, Piotr; Piotrowski, J.; Rogalski, Antoni

doi:10.5573/jsts.2016.16.5.695

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…The activation energy increases to ~ 56 meV with the incorporation of Be. This value is in very good agreement with the Be thermal activation energy of 55 meV extracted from the temperature-dependent Hall measurement conducted on Be-doped GaSb layer grown on GaAs by MBE [29]. This result further confirms the effective integration of Be in the NA acceptor sites, possibly by occupying the various VGa and VSb vacancies.…”

Section: Resultssupporting

confidence: 87%

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

Chen

Shao

et al. 2018

Infrared Physics & Technology

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In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature-and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to ~7 meV, and the peak widths characterized by Full-Widthat-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates.

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Section: Resultssupporting

confidence: 87%

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

Chen

Shao

et al. 2018

Infrared Physics & Technology

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“…300 periods (P) T2SLs InAs/InAsSb were grown on 250 nm GaAs smoothing layer, followed by 1.2 μm thick GaSb buffer on the GaAs substrates. The 1.2 μm thick buffer connected with interfacial misfit array (IMF) growth mode allowed high-quality structures to be obtained without any surface corrugations for the IR photoconductor's final fabrication [12][13][14].…”

Section: Materials Growth Proceduresmentioning

confidence: 99%

The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature

et al. 2022

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In this paper, we report on the influence of molecular beam epitaxial (MBE) growth temperature on the spectral response of the long-wavelength infrared radiation (LWIR), three-stage thermoelectrically (TE) cooled (T = 210, 230 K) InAs/InAsSb type-II superlattice (T2SL)-based detectors grown on the GaSb/GaAs buffer layers/substrates. Likewise, antimony (Sb) composition and the superlattice (SL) period could be used for spectral response selection. The presented results indicate that the growth temperature affects the 50% cut-off (λ50%cut-off) of the fabricated devices and could be used for operating wavelength tunning. Assuming constant Sb composition and T2SL period during MBE process, the growth temperature is presented to influence λ50%cut-off covering entire LWIR (e.g., temperature growth change within the range of 400–450 °C contributes to the λ50%cut-off ~ 11.6–8.3 μm estimated for operating temperature, T = 230 K). An increase in temperature growth makes a blueshift of the λ50%cut-off, and this is postulated to be a consequence of a modification of the SL interfaces. These results show an approach to the T2SL InAs/InAsSb deposition optimization by the growth temperature in terms of the spectral response, without influencing the T2SLs’ structural properties (Sb composition, SL period).

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