p-type doping by B ion implantation into diamond at elevated temperatures

Tsubouchi, Nobuteru; Ogura, Masahiko; Kato, Hiromitsu; Ri, Shien; Watanabe, Hideyuki; Horino, Y.; Okushi, Hideyo

doi:10.1016/j.diamond.2005.09.008

Cited by 15 publications

(8 citation statements)

References 10 publications

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“…This is in contrast to the case of boron where the binding energy of a boronvacancy complex is just 1.8 eV, and therefore can be overcome at the annealing temperatures employed [36][37][38][39][40][41][42]. The practical implication is that one will not easily remove implantation damage from material containing impurities such as P and As so that only substitutional impurities remain.…”

Section: Impurity Band Conductionmentioning

confidence: 94%

“…In order to recover the crystalline material high temperature annealing is required. For example, Tsubouchi reports 1450 °C [40,42], and Wu employs annealing at 1700 °C [41]. Furthermore, these temperatures are also employed for indiffusion of boron [45].…”

Section: Electron Affinities and Ionization Energiesmentioning

confidence: 98%

“…In the case of boron implanted materials, there has been some success in obtaining p-type material [36][37][38][39][40][41][42]. In such experiments annealing temperatures above 1130 °C have been employed.…”

Section: Impurity Band Conductionmentioning

confidence: 99%

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Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Impurity Band Conductionmentioning

confidence: 94%

Section: Electron Affinities and Ionization Energiesmentioning

confidence: 98%

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Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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“…In electronics, diamond is mostly studied for its use as p-and n-type semiconductors. For these purposes, it has been doped with various dopants to create a p-type diamond (doping with boron 2,3 ) or n-type diamond (doping with nitrogen, phosphorus or sulphur 4 ).…”

Section: Introductionmentioning

confidence: 99%

Erbium ion implantation into diamond – measurement and modelling of the crystal structure

Cajzl

Nekvindová

Macková

et al. 2017

Phys. Chem. Chem. Phys.

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Diamond is proposed as an extraordinary material usable in interdisciplinary fields, especially in optics and photonics. In this contribution we focus on the doping of diamond with erbium as an optically active centre. In the theoretical part of the study based on DFT simulations we have developed two Er-doped diamond structural models with 0 to 4 carbon vacancies in the vicinity of the Er atom and performed geometry optimizations by the calculation of cohesive energies and defect formation energies. The theoretical results showed an excellent agreement between the calculated and experimental cohesive energies for the parent diamond. The highest values of cohesive energies and the lowest values of defect formation energies were obtained for models with erbium in the substitutional carbon position with 1 or 3 vacancies in the vicinity of the erbium atom. From the geometry optimization the structural model with 1 vacancy had an octahedral symmetry whereas the model with 3 vacancies had a coordination of 10 forming a trigonal structure with a hexagonal ring. In the experimental part, erbium doped diamond crystal samples were prepared by ion implantation of Er ions using ion implantation fluences ranging from 1 × 10 ions per cm to 5 × 10 ions per cm. The experimental results revealed a high degree of diamond structural damage after the ion implantation process reaching up to 69% of disordered atoms in the samples. The prepared Er-doped diamond samples annealed at the temperatures of 400, 600 and 800 °C in a vacuum revealed clear luminescence, where the 〈110〉 cut sample has approximately 6-7 times higher luminescence intensity than the 〈001〉 cut sample with the same ion implantation fluence. The reported results are the first demonstration of the Er luminescence in the single crystal diamond structure for the near-infrared spectral region.

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“…For the ion-implantation technique the fluences required usually result in graphitization 11,12 , a process that cannot be reversed 13 . Here, we take advantage of (i) high energy implantation to bury the B layer deep inside the diamond where it is subjected to high internal pressures, keeping the lattice intact even under extreme implantation conditions, (ii) high temperature implantation to promote dynamic annealing during the implantation to inhibit graphitization [14][15][16][17] . Residual damage can then be removed by a post implantation annealing step 18 .…”

Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Beveren

Liu

Bowers

et al. 2016

Journal of Applied Physics

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Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ionimplantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process. a)

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p-type doping by B ion implantation into diamond at elevated temperatures

Cited by 15 publications

References 10 publications

Theoretical models for doping diamond for semiconductor applications

Theoretical models for doping diamond for semiconductor applications

Erbium ion implantation into diamond – measurement and modelling of the crystal structure

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

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