p
          -type conduction in N–Al co-doped ZnO thin films

Lü, Jianguo; Ye, Z. Z.; Zhuge, Fei; Zeng, Yu‐Jia; Zhao, Binghui; Zhu, Lingjun

doi:10.1063/1.1803935

Cited by 221 publications

(108 citation statements)

References 11 publications

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“…Estimated values of film thickness (t) by using Profilometer, gravimetric method and using PARAV software, refractive index at 633nm (n), Energy gap (E g ) and Burstein-Moss energy shift (ΔEBM) for the thin films of B-N codoped ZnO with various B concentrations. 8 and is in agreement with earlier reports 29 . The magnitude of Burstein-Moss energy shift arising from the shift of Fermi levels for the samples were calculated and presented in Table 3.…”

Section: Optical Propertiessupporting

confidence: 83%

“…Optical band gaps (E g ) of the deposited thin films are calculated using the Tauc relation 28 (8) where α is the absorption coefficient, hν energy of photon, B is the band tailing parameter and n is a constant equal to 1/2 as ZnO is a direct band material. The plots of (αhν) 2 versus (hν) for the films were shown in Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Codoping of ZnO with group III and group V elements can be utilized to improve the acceptor solubility and thereby making acceptor levels shallower 7 . A few reports are available in the literature studying the feasibility of Al-N codoping 8 , In-N codoping [9][10][11] , B-N codoping 12 , Ga-N codoping 13 , Ag-N codoping 14 , Sn-N codoping 15 etc. in order to improve the p type electrical performance of ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

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B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Narayanan

Deepak

2017

Mat. Res.

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The success of codoping by donor-acceptor impurities in accomplishing p type ZnO thin films deposited by spray pyrolysis technique is reported here. Monodoping ZnO with N altered the conductivity type but the resistivity is too high making it practically impossible to be useful in optoelectronic applications. B-N codoping increased the carrier concentration and obtained comparatively low resistivity because codoping enhanced the acceptor incorporation by forming acceptor-donor-acceptor complex in the band gap. XRD analysis revealed the dependence of dopant incorporation on the texture and microstructure of the films. XPS analysis confirmed the enhancement of N incorporation with codoping. Energy gap value increased for codoped films due to the Burstein-Moss effect, arising from the increase in carrier concentration. Hence the present work envisages the preparation of transparent p type ZnO thin films suitable for tandem thin film solar cells and also for other optoelectronic applications.

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Section: Optical Propertiessupporting

confidence: 83%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Narayanan

Deepak

2017

Mat. Res.

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“…[7] Techniques used for ZnO film growth include molecular beam epitaxy (MBE), [1] pulsed laser deposition (PLD), [8] metal-organic (MO)CVD, [2] and RF/DC magnetron sputtering. [3] Several groups have even observed electroluminescence at room temperature from ZnO p-n homojunctions, [9][10][11] which is a great step towards the practical application of ZnO optoelectronic devices. It is known that device fabrication requires high-quality crystallinity and abrupt interfaces between epitaxial layers.…”

mentioning

confidence: 99%

Low‐Temperature Growth of p‐Type ZnO Thin Films via Plasma‐Assisted MOCVD

Zeng

et al. 2007

Chemical Vapor Deposition

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ZnO, with a large exciton binding energy (60 meV) and a wide band gap (3.37 eV) at room temperature, has aroused renewed interest for possible applications in blue/UV optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), spin-LEDs, solar-blind UV photodetectors, and transparent electronic devices. To realize these applications, one of the key issues is the growth of high quality p-type ZnO, which is difficult as ZnO is naturally n-type and has low solubility in p-type dopants. p-type ZnO has been realized by doping group V and group I species such as N, [1][2][3][4] P, [5] As, [6] and Li. [7] Techniques used for ZnO film growth include molecular beam epitaxy (MBE), [1] pulsed laser deposition (PLD), [8] metal-organic (MO)CVD, [2] and RF/DC magnetron sputtering.[3] Several groups have even observed electroluminescence at room temperature from ZnO p-n homojunctions, [9][10][11] which is a great step towards the practical application of ZnO optoelectronic devices. It is known that device fabrication requires high-quality crystallinity and abrupt interfaces between epitaxial layers. However, previously reported p-type ZnOs were grown at relatively high temperatures, such as 400-600°C, [6,9,10] and some were annealed at even higher temperatures. [4,6,9] .These approaches could induce thermal atomic diffusion at the interfaces, and so are not suitable for industrial production. In this communication, p-type ZnO thin films were grown at the low temperature of 250°C using plasma-assisted MOCVD. In the process of growth, NO or N 2 O plasma was used as both the O source and the N-doping source, which not only increased the activity of the N atoms but also improved the reactivity of the O atoms. In this way, high quality p-type ZnO films can be obtained at low temperature. We prepared two samples, one of ZnO:NO and the other ZnO:N 2 O. Both films show a flat and compact surface, and the surface morphology of the ZnO:NO thin film is shown in Figure 1. The film is composed of homogenous grains with an average grain size of 30 nm. In order to investigate the crystalline properties of these films, X-ray diffraction (XRD) spectra were collected and are shown in Figure 2. Both samples give almost the same spectrum in which only one peak appears, indicating a high (0002) preferential orientation. The diffraction angles of both films are in agreement with bulk ZnO. It seems that N-doping induces no distinct distortion in the lattices. The intensity of the (0002) diffraction peak is relatively stronger for ZnO:NO film. This may be due to the better crystalline quality of ZnO:NO film, whilst more defects such as (N 2 ) O or other structure defects could be contained in ZnO:N 2 O film. [12] Details of the mechanism will be discussed in the Hall measurements shown below.

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“…However, the major component, indium, is one of the expensive rare earth materials components, and will face shortages of natural resources. In order to resolve this drawback in ITO transparent conductors, various materials systems are introduced as a TCO for the replacement of ITO [8][9][10][11][12][13]. Recently, it is reported that electrical conductivity is significantly increased for doped SnO 2 , as well as charge carrier concentration [14,15].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

Woo¹,

Koo²,

Chan³

et al. 2012

Transactions on Electrical and Electronic Materials

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Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at 550℃ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about 8~10 × 10 -3 Ω·cm, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

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p -type conduction in N–Al co-doped ZnO thin films

Cited by 221 publications

References 11 publications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Low‐Temperature Growth of p‐Type ZnO Thin Films via Plasma‐Assisted MOCVD

Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

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