B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Abstract

The success of codoping by donor-acceptor impurities in accomplishing p type ZnO thin films deposited by spray pyrolysis technique is reported here. Monodoping ZnO with N altered the conductivity type but the resistivity is too high making it practically impossible to be useful in optoelectronic applications. B-N codoping increased the carrier concentration and obtained comparatively low resistivity because codoping enhanced the acceptor incorporation by forming acceptor-donor-acceptor complex in the band gap. XRD analysis revealed the dependence of dopant incorporation on the texture and microstructure of the films. XPS analysis confirmed the enhancement of N incorporation with codoping. Energy gap value increased for codoped films due to the Burstein-Moss effect, arising from the increase in carrier concentration. Hence the present work envisages the preparation of transparent p type ZnO thin films suitable for tandem thin film solar cells and also for other optoelectronic applications.

Effect of Ni and Al doping on structural, optical, and CO2 gas sensing properties of 1D ZnO nanorods produced by hydrothermal method

“…The E g values calculated for all samples are numerically tabulated in Table 1. It is visible from the table that the pure sample possesses the maximum band gap energy of 3.26 eV that is compatible with the literature for the thin film ZnO nanorods (Chanda et al, 2017; Narayanan & Deepak, 2018; Singh et al, 2017). Besides, Table 1 shows that the band gap energy is observed to decrease monotonously with the increment in the dopant addition level (especially the Al‐doped compounds).…”

“…The band gap value is calculated using α value and the following equation: numerically tabulated in Table 1. It is visible from the table that the pure sample possesses the maximum band gap energy of 3.26 eV that is compatible with the literature for the thin film ZnO nanorods (Chanda et al, 2017;Narayanan & Deepak, 2018;Singh et al, 2017).…”

Properties and Configurations of B-N Co-Doped ZnO Nanorods Fabricated on ITO/PET Substrate

“…It is found that co-doping of B-N can effectively reduce the resistivity and further increase the carrier concentration. The Burstein-Moss effect increases the energy gap of the B-N co-doped film, thereby increasing the light utilization efficiency by stacking absorbers with different energy gaps (Nripasree et al, 2017). At present, co-doping ZnO with group III and V elements can be utilized to improve the acceptor solubility so as to enhance the electrical properties of the ZnO film (Yamamoto et al, 2001;Bian et al, 2004).…”

Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species

“…An ideal donor codopant is one that is not a ptype killer but is a reactive dopant that facilitates p-dopant incorporation and activation. 52 Boron, one such dopant, is used in this study as the donor codopant.…”

“…Phosphorus is a preferred p-type dopant because of its large solubility relative to other dopants and its shallow acceptor level in ZnO; however, p-ZnO achieved in this manner has stability concerns. An ideal donor codopant is one that is not a p-type killer but is a reactive dopant that facilitates p-dopant incorporation and activation . Boron, one such dopant, is used in this study as the donor codopant.…”