P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Abstract

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·1016cm-3, the hole mobility is ∼8 cm2/V·s and the resistivity is ∼35 Ω·cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

“…1,2 Recently, the application of this material to efficient power electronic devices has attracted interest. 3,4 For this purpose, the device fabrication process will greatly benefit from ion implantation technology.…”

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

“…3 Blue lightemitting diodes are already a commercial product, 4 and blue laser diodes, 5 uv detectors, 6 and high-power, hightemperature field-effect transistors 7 have been demonstrated and are improving rapidly. Most of the GaN ͑also InGaN and AlGaN͒ material used so far for device development consists of epitaxial growth on sapphire, and the epitaxial techniques include metalorganic chemical vapor deposition ͑MOCVD͒, molecular beam epitaxy ͑MBE͒ and hydride vapor phase epitaxy ͑HVPE͒.…”

Electrical and structural analysis of high-dose Si implantation in GaN

“…1,2 The further realization that activation of hydrogenpassivated Mg acceptors by thermal annealing could produce p-type GaN opened the door for many device demonstrations including light-emitting diodes, laser, detectors, and transistors. [3][4][5][6][7][8][9][10] While further advances in material quality will lead to additional device improvements, many advanced device structures will require improvements in device processing technology as well. One area of processing technology that should play an enabling role, particularly for electronic devices, is ion implantation, which can be used to produce selective area doping or compensation.…”