P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

“…The transfer characteristics of the typical vertical TFTs are shown in figure 2(a) and 2(b), where different drain-source voltages are adopted corresponding to the linear regime. Note that, from output characteristics measurement, a kink region is also observed [8]. The kink effect is due to the short channel length.…”

In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors

“…Finally, the source, drain and gate contact pads are formed by vacuum-depositing a thick aluminum layer and then patterned by a fifth mask and etched in etchant solution. More details on the VTFT fabrication process can be obtained in a previous published paper [10].…”

“…In addition to the approach of increasing the field effect mobility by various processing methods such as laser crystallization [7], or metal-induced crystallization [8], another method is adopting short-channel transistors. In order to seek this aim, thin film transistors with vertical configuration were adopted, where source and drain layers lie on top and at bottom of the stacked layers, and channel length is defined by the barrier layer thickness between source and drain, being independent of the photolithographic designing rule [9,10]. This vertical configuration not only potentially enables a large drive current, but also potentially enables to increase the operating frequency by an inverse square relationship with the channel length [11].…”

“…In our optimized device configuration, the channel layer of the polycrystalline silicon vertical thin film transistor (VTFT) is deposited on top of the sidewalls formed by a plasma etching process [10]. Therefore, the dry-etched morphology of the sidewalls greatly affects the nucleation and growth of the active layer.…”

Aryl-Diazonium Functionalized Polycrystalline Silicon Nanoribbons Based Device for Lead Detection

“…It is composed of a combination of silicon crystals and grain boundaries formed during crystallization process. Poly-Si is formed by deposition of the layer and finds a lot of applications such as thin film transistors (TFT) [1], solar cells [2] or strain gauges [3]. It has also proved its efficiency as sensitive material for chemical sensors.…”