p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applications

New approach to fabricate densificated continuous fiber reinforced polytetrafluoroethylene composites with significantly improved interfacial bonding and mechanical properties

“…However, the high cost of these materials is prohibitive to the commercialization of an integrated T/R module. Low cost silicon‐based CMOS technology with high integrative capacity becomes more attractive in broadband applications [3, 4], but its applications in satellite communication are limited by its soft radiation tolerance in outer space [5]. Due to the advantages of low cost and integration capability with base band circuits, high performance SiGe BiCMOS technology is one of the most favorable processes for the next generation phase array communication systems.…”

“…For the T/R module in satellite communication applications, high performance switching devices are critical components for the successful system integration. Layout and process optimization have been studied for improving PIN diode's insertion loss and isolation [3–5]. However, the effects of anode‐to‐cathode distance (ACD) on PIN switch insertion loss and isolation, and the layout effects on the linearity are not well understood and lack theoretical analysis.…”