P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor

Oota, Masashi; Ishihara, Noritaka; Nakashima, Miho; Kurosawa, Yoichi; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Kanzaki, Yohsuke; Matsukizono, Hiroshi; Kaneko, Seiji; Matsuo, Takami

doi:10.1002/j.2168-0159.2014.tb00253.x

Cited by 4 publications

(5 citation statements)

References 8 publications

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“…33 Although other studies exist on native defects in crystalline IGZO, 35 they did not consider H at high concentrations ($10 20 cm À3 ). 16 According to Eq. (1), increasing the formation energy of V O reduces the probability of forming V O , which means that O is difficult to remove.…”

Section: Calculational Results and Discussionmentioning

confidence: 99%

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Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V O ), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V O sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V O and H in crystalline InGaO 3 (ZnO) m (m ¼ 1). The results indicate that when H is trapped in V O , a stable complex is created that serves as a shallow-level donor. V C 2014 AIP Publishing LLC.

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Section: Calculational Results and Discussionmentioning

confidence: 99%

“…16 For example, the formation of a silicon nitride film on top of a high-resistance OS film that serves as an active layer remarkably reduces the OS film resistance while retaining transparency. Thus, the OS film can be divided into semiconductor and conductor regions within the same layer.…”

Section: Introductionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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“…Through this direct SiN deposition onto the OS film, a low-resistivity area was formed in the OS film. 18) Finally, Cu-based source and drain electrodes were formed by sputtering and patterning. In this manner, the TGSA-FETs were completed.…”

Section: Methodsmentioning

confidence: 99%

Achievement of a high-mobility FET with a cloud-aligned composite oxide semiconductor

Yamazaki

Shima²,

Hosaka³

et al. 2016

Jpn. J. Appl. Phys.

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We have recently discovered that films of a widely used In–Ga–Zn oxide (IGZO) with have different material composition states when sputter-deposited under different conditions using the same polycrystalline IGZO target. Significant improvements in on-state current and mobility (as high as 40 cm2·V−1·s−1) are obtained. The results of local composition analysis indicate that the deposited film is not composed of any known homogeneous IGZO compound and that the components of this film are separated into two types of nanoparticle regions: one type is composed mainly of GaO x and GaZnO x , which contribute to on/off (switching) characteristics, and the other is composed mainly of InO x and InZnO x , which contribute to on-state characteristics. These regions constitute a new type of oxide semiconductor (OS) film. The nanoparticles with a blurry boundary extend like a cloud, probably complementing one another. We consider that this OS film has a novel composition, which can be described as a “cloud-aligned composite OS” (CAC-OS).

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“…[1][2][3][4][5][6][7] Considerable research and development have been focused on using IGZO for display backplanes and, as a result, IGZO is now used in high-definition, low-powerconsumption liquid-crystal, and organic light-emitting-diode displays. [8][9][10][11][12][13] In addition, we proposed a variety of nondisplay applications for IGZO. [14][15][16][17][18][19][20][21] OSs may be classified in terms of crystallinity, and various crystal morphologies that differ from so-called amorphous or single-crystal structures have been confirmed.…”

Section: Introductionmentioning

confidence: 99%

Influence of heat treatment on physical properties of In–Ga–Zn–O thin films

Okazaki¹,

Kanemura²,

Obonai³

et al. 2015

Jpn. J. Appl. Phys.

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For unstable In-Ga-Zn-O (IGZO) thin films, electron-beam irradiation during transmission electron microscopy or heat treatment is reported to change the film structure and enhance its crystallization. Using IGZO films formed under two conditions, we study how the physical properties of IGZO films correlate with the electron-beam irradiation dose or heat-treatment temperature. IGZO films deposited under high deposition pressure contain many voids, have a relatively high impurity concentration, and are crystallized by electron-beam irradiation or heat treatment. In contrast, IGZO films formed under low deposition pressure are dense and the crystal size in the film does not change under electron-beam irradiation or heat treatment. In addition, heat treatment further increases the density of an originally dense film and reduces the defect density.

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P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor

Abstract: Abstract

Cited by 4 publications

References 8 publications

Origin of major donor states in In–Ga–Zn oxide

Origin of major donor states in In–Ga–Zn oxide

Achievement of a high-mobility FET with a cloud-aligned composite oxide semiconductor

Influence of heat treatment on physical properties of In–Ga–Zn–O thin films

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