P‐20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors with N₂O Plasma Treatment

Abstract

Amorphous InGaZnO 4 (a-IGZO) thin film transistors (TFTs) are promising devices in backplane technology. Since a-IGZO TFTs are very sensitive to the fabrication processes, they need stable process to keep their initial deposition properties. Herein we improved the stability of a-IGZO by applying N 2 O plasma. The stability characteristic of a-IGZO TFT was improved with N 2 O plasma. V th shift was 1.5V for 10,000s under NBTS with illumination which was the best result in the world.

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

“…It is shown that devices with N O treatment have better electrical stability than devices with O treatment during the DC stress. The stress result is quite consist with previous report that devices with N O treatment have better electrical stability [24]- [26] owing to the effect of repairing of device back channel defect [27], [28].…”

58.2: Distinguished Paper: Implementation of 240Hz 55‐inch Ultra Definition LCD Driven by a‐IGZO Semiconductor TFT with Copper Signal Lines

“…To improve the stability, a few annealing processing steps are added after the deposition of active layer and insulators. The details of fabrication are presented in the reference [4,5].…”

69-1:Invited Paper: Oxide TFT Development for AMLCDs and AMOLEDs

“…To overcome these problems, oxide TFT backplane technology was suggested in 2004 [2]. Many researchers have found the amorphous In-Ga-Zn-oxide (a-IGZO) as a possible material with higher mobility (~10 cm 2 /Vs) and lower off-current (~ 10 -17 A), along with compatibility to the a-Si process of existing mass production lines [3][4]. Higher mobility renders high resolution and narrow bezels due to the improved charging characteristics for both pixel and integrated gate-drivers.…”