Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Tai, Ya‐Hsiang; Chiu, Hao-Lin; Chou, Lu-Sheng

doi:10.1109/jdt.2013.2257680

Cited by 9 publications

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

Simicic

Ashif

Hellings

et al. 2020

Microelectronics Reliability

View full text Add to dashboard Cite

The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide (IGZO) and Indium-Tin-Zinc-Oxide (ITZO) materials offer a higher current conductivity and thus a better performance. This makes them interesting candidates for TFT integrated circuits also beyond displays. However, integrated circuits can be easily damaged by electrostatic discharges (ESD) and require integrated protection solutions. To find possible vulnerabilities and solutions, this paper analyzes ESD robustness of two IGZO and one ITZO TFT device architecture. Measurement methodsElectrostatic discharge (ESD) events appear regularly in the environment. Part of these events can be replicated in laboratory using the Human Body Model (HBM). However, the HBM ESD tester produces a relatively complex waveform and is mostly used to perform pass/fail tests. The Transmission Line Pulser (TLP) is the academic equivalent of

show abstract

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

Simicic

Ashif

Hellings

et al. 2020

Microelectronics Reliability

View full text Add to dashboard Cite

show abstract

ESD protection design in a-IGZO TFT technologies

Scholz¹,

Myny²,

Chen³

et al. 2016

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

View full text Add to dashboard Cite

show abstract

Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Liu

Lei

et al. 2014

IEEE Electron Device Lett.

View full text Add to dashboard Cite

The instability of indium zinc oxide thin film transistors (IZO TFTs) is investigated under transmission line pulsed (TLP) stress by applying repeated voltage pulses with different durations (50-200 ns) to the gate with grounded source and drain. Threshold voltage increases and then electron field effect mobility decreases after TLP stress. These results are due to electron trapping in the existing traps of gate oxide near the SiO 2 /IZO interface, which is verified by the subsequent annealing experiment. The instability behavior is also investigated by lowfrequency noise measurements before and after TLP stress. Furthermore, influences of stress voltage and pulsewidth on the degradation effect of IZO TFT are discussed. Index Terms-Indium zinc oxide (IZO), thin film transistor (TFT), transmission line pulse (TLP), electrostatic discharge (ESD), low frequency noise (LFN).

show abstract

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Cited by 9 publications

References 27 publications

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

ESD protection design in a-IGZO TFT technologies

Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress

Contact Info

Product

Resources

About