P‐19: Effect of RTP Annealing Using UV and DUV Light on the Properties of the Al‐IZTO TFTs

Abstract

In the oxide thin film transistors (TFTs), annealing process is necessary to improve its electrical properties, and generally performed by a furnace and an oven. Compared with them, rapid thermal process (RTP) can serve several advantages including much reduced process time and improved uniformity, which are more important factors in mass-production industry. In addition to near-infrared (NIR) lamp, generally used as a heat source, ultra-violet (UV) and deep-ultra-violet (DUV) light sources can also be used in RTP system, and they can provide much higher energy, giving the possibility of more effective and efficient annealing. Herein, we studied the annealing effect of RTP system utilizing UV and DUV light source on the electrical properties of back-channel etched aluminum-doped indium zinc tin oxide thin film transistors (Al-IZTO BCE TFTs). Author KeywordsOxide thin film transistor; Rapid thermal process (RTP); UV and DUV annealing effect P-19 / Y. Nam SID 2018 DIGEST • 1249 ISSN 0097-996X/18/4703-1249-$1.00 © 2018 SID Figure 5. Evolution of transfer curves under (a) PBTS (V gs =+1.0MV/cm, T=60 o C, Time=10000s) and NBTS ((V gs =-1.0MV/cm, T=60 o C, Time=10000s) for the Al-ITZTO TFTs with 1 st annealing using RTP-NIR, UV/NIR, and DUV/NIR annealing.

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

“…The high μ FE values of OS TFTs mean these devices could be used in fields that have been dominated by LTPS TFTs and in transparent and flexible devices that are incompatible with Si. Numerous types of approaches to enhance the μ FE value of OS TFTs have been investigated, including cation composition 12 , 13 , multiple channel structures 14 , 15 , dual-gate architecture 16 , 17 , metal capping layer structures 18 , 19 , post treatment 20 , 21 , and their combination. Among these, cation composition control is the most promising method.…”