Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

Lee, Sang Yeol

doi:10.1007/s42341-020-00197-w

Cited by 54 publications

(35 citation statements)

References 43 publications

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“…Figure 1a shows that doped and undoped thin films have amorphous structures and do not change with the dopant addition. This characteristic is commonly reported in oxide semiconductors [8]. Figure 1b shows the Raman spectra of the films where vibrational modes were found at 116, 374, 434, 573, 654, 812 and 1110 cm −1 corresponding to modes E2(low), A1(TO), E2(high), E1(LO), E1(TA+LO), E2(high)-E2(low) and A1(2LO), respectively [9][10][11][12][13].…”

Section: Resultssupporting

confidence: 67%

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic

Cerón

Orduña-Díaz

Dominguez

2021

The 1st International Conference on Micromachines and Applications

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In this work, zinc oxide and indium-doped zinc oxide thin films at different concentrations were deposited by solution techniques at 200 °C. The thin films were characterized by XRD, Raman, FTIR and the four-point probe technique. Through FTIR spectroscopy, interesting behavior was observed when the IZO film at 6 wt.% doping showed a lower number of organic residues. Due to an inductive effect, an unusual displacement of bonds was observed. The reduction of organic residuals corroborated with the behavior of flexible metal–insulator–semiconductor (MIS) capacitors.

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Section: Resultssupporting

confidence: 67%

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic

Cerón

Orduña-Díaz

Dominguez

2021

The 1st International Conference on Micromachines and Applications

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“…The resulting transfer performance of the SPC-prepared In 2 O 3 :H TFT ( R [H 2 ] = 5%) was superior to that of previously reported oxide-based TFTs 38 . Although the µ H of the In 2 O 3 :H ( R [H 2 ] = 5%) films decreased to 14.9 cm 2 V −1 s −1 with N e of 2.0 × 10 17 cm −3 by annealing at 300 °C as shown in Fig.…”

Section: Resultsmentioning

confidence: 62%

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

et al. 2022

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Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μFE) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100 cm2V−1s−1). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In2O3 (In2O3:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In2O3:H TFTs fabricated at 300 °C exhibit superior switching properties with µFE = 139.2 cm2V−1s−1, a subthreshold swing of 0.19 Vdec−1, and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In2O3:H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In2O3:H TFTs have a great potential for use in future transparent or flexible electronics applications.

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“…Thin-film transistor (TFT) is the key technology for developing next-generation flexible/wearable electronics implemented on any low-cost substrates [1,2]. Among several TFT technologies including organic, amorphous Si, and low-temperature poly-Si (LTPS)-TFTs, oxide semiconductor-TFT (oxide-TFT) technology represented by amorphous-In-Ga-Zn-O (a-IGZO)-TFT is widely recognized as the most promising because the n-channel oxide-TFT meets the requirements for both the high device performance and high manufacturability for future electronics [3,4,5,6]. Since a-IGZO-TFT exhibiting excellent device characteristics such as high TFT mobility of > 10 cm 2 /Vs, low-off current as low as < 1 pA, low-voltage operation of ±3 V, steep subthreshold slope of ∼ 0.1 V/decade, etc.…”

Section: Introductionmentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In-Ga-Zn-O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over > 10 cm 2 /Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.

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Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

Cited by 54 publications

References 43 publications

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

Recent progress of oxide-TFT-based inverter technology

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