2010
DOI: 10.1889/1.3500248
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P‐143: Possibility of Reflective LC Display Using Oxide Semiconductor TFTs as Electronic Paper Display

Abstract: We successfully prototyped a 3.4-inch QHD PDLCD panel integrally including data and scan drivers of oxide semiconductor TFTs and capable of displaying still images at 0.2 fps, which can be adopted to electronic paper displays. This panel can display both still images and moving images and reduce power consumption.

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Cited by 18 publications
(16 citation statements)
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“…We reported a driving method for reducing the power consumption of drivers by utilizing the off-state leakage current of an IGZO transistor, which is much lower than that of a Si transistor, so that the interval between data rewrite operations is 5 seconds or longer while still images are displayed [6][7][8].…”
Section: New Driving Methods In Displaying Still Imagementioning
confidence: 99%
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“…We reported a driving method for reducing the power consumption of drivers by utilizing the off-state leakage current of an IGZO transistor, which is much lower than that of a Si transistor, so that the interval between data rewrite operations is 5 seconds or longer while still images are displayed [6][7][8].…”
Section: New Driving Methods In Displaying Still Imagementioning
confidence: 99%
“…Research on IGZO was started by Kimizuka et al in the mid-1980's [1][2][3][4][5]. We have reported LCDs and tandem OLED displays using IGZO transistors [6][7][8][9][10][11][12][13]. Since an IGZO transistor has much higher mobility than amorphous silicon (a-Si) transistor and has normally-off characteristics, drivers can be easily fabricated on glass.…”
Section: Introductionmentioning
confidence: 99%
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“…In addition, CAAC‐IGZO and nc‐IGZO are suitable for mass production because they can be manufactured over a glass substrate at relatively low temperatures and show a stable crystal size that remains unchanged by heat treatment. To develop IGZO‐based electronic devices, we have fabricated channel‐etched field‐effect transistors (CE FETs) with high performance characteristics and high reliability by reducing the amount of defect levels in the gap in an OS‐FET through the use of a CAAC‐IGZO active layer as described above …”
Section: Introductionmentioning
confidence: 99%
“…Attempts at such low-frequency driving, that is, idling stop (IDS) driving, employing an OS were previously reported [9][10][11][12][13][14][15][16]. This is eye-friendly REST driving, which can reduce flickers.…”
Section: Introductionmentioning
confidence: 99%