P‐141: Student Poster: Modulation of Subthreshold Current in In‐Ga‐Zn‐O Thin‐film Transistor for OLED Display using Electrohydrodynamic Jet Printing

Abstract

Here, we suggest simple method for multi value slope In‐Ga‐Zn O (IGZO) thin‐film transistors (TFTs) using electrohydrodynamic (EHD) jet printing. To induce multi value slope, parasitic channel was intentionally formed on top of IGZO main channel using EHD jet printing. By precisely controlling parasitic channel regime with EHD jet printing, multi value slope could be realized without degradation in electrical performance of original IGZO TFTs.

6‐2: High Subthreshold Swing a‐IGZO Driving TFTs Without Mobility Degradationfor Low‐Gray Level Image Quality Improvement in Active‐Matrix OLED

“…The carrier concentration of oxide semiconductor such as a-IGZO is relatively easy to control using some reaction methods such as interfacial oxidation. In the previous work, a significant increase in SS of a-IGZO TFT was observed with the carrier concentration control method using the additional Al layer [9]. Meanwhile, an unintended hump in the transfer curve, which might obstruct the linear operation of pixel circuit, was observed.…”