6‐2: High Subthreshold Swing a‐IGZO Driving TFTs Without Mobility Degradationfor Low‐Gray Level Image Quality Improvement in Active‐Matrix OLED

Abstract

In this paper, high subthreshold swing (SS) amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs) were fabricated using a sputtered Al2O3 layer, which was deposited on an active layer of the conventional bottom‐gate a‐IGZO TFTs and patterned using photolithography. By optimizing the Al2O3layer, high SS without mobility degradation could be achieved.