Ozone-treated channel diamond field-effect transistors

Sakai, Takeyasu; Song, Kwan Soup; Kanazawa, Hirofumi; Nakamura, Yusuke; Umezawa, Hamao; Tachiki, M.; Kawarada, Hiroshi

doi:10.1016/s0925-9635(03)00277-2

Cited by 58 publications

(35 citation statements)

References 10 publications

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“…After each anodic scan, the variations of I DS with V GS was also measured at V DS = −1 V to determine the V TH shifts of the BDD SGFET. As shown in Figure 2 c, the V TH shifts to a more negative potential as the scan voltage increases from 1.2 to 1.7 V. The present findings are consistent with the findings of our prior study, where we investigated the effect of ozone treatment on an un-doped diamond SGFET [ 22 ]. When the BDD SGFET channel was pre-oxidized at 1.2 V, hydrogen atoms were removed from the BDD surface, leaving unstable dangling carbon radicals.…”

Section: Resultssupporting

confidence: 92%

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Falina

Kawai

et al. 2018

Sensors

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In this paper, we report on the effect of carboxyl- and amine terminations on a boron-doped diamond surface (BDD) in relation to pH sensitivity. Carboxyl termination was achieved by anodization oxidation in Carmody buffer solution (pH 7). The carboxyl-terminated diamond surface was exposed to nitrogen radicals to generate an amine-terminated surface. The pH sensitivity of the carboxyl- and amine-terminated surfaces was measured from pH 2 to pH 12. The pH sensitivities of the carboxyl-terminated surface at low and high pH are 45 and 3 mV/pH, respectively. The pH sensitivity after amine termination is significantly higher—the pH sensitivities at low and high pH are 65 and 24 mV/pH, respectively. We find that the negatively-charged surface properties of the carboxyl-terminated surface due to ionization of –COOH causes very low pH detection in the high pH region (pH 7–12). In the case of the amine-terminated surface, the surface properties are interchangeable in both acidic and basic solutions; therefore, we observed pH detection at both low and high pH regions. The results presented here may provide molecular-level understanding of surface properties with charged ions in pH solutions. The understanding of these surface terminations on BDD substrate may be useful to design diamond-based biosensors.

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Section: Resultssupporting

confidence: 92%

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Falina

Kawai

et al. 2018

Sensors

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“…The device performance is closely related to our device process inspired by two reported phenomena. One is that UV ozone treatment can turn H-diamond surface to partially oxygen-terminated, and so the two-dimensional hole gas (2DHG) density can be reduced to some extent depending on the treating time [17]. The H-diamond MOSFETs with partial C-O channel and ALD-Al…”

Section: Resultsmentioning

confidence: 99%

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Ren

Chen

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of −1.0 V, and a drain current of 51.6 mA/mm at V GS = V DS = −4.5 V and an on-resistance of 65.39 •mm. The transconductance keeps increasing when V GS shifts from V TH toward more negative direction, and reaches the record high value of 20 mS/mm at V GS of −4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of −4 V < V GS < −2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric. INDEX TERMS Single crystalline diamond, normally-off, MOSFET.

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“…[36][37][38] The O-terminated diamond surface vanished after 400 o C annealing in vacuum. 39 While Thomas Lechleitner et al 40 Figure S1) As one of the source gases during CVD process, hydrogen makes the diamond grains H-terminated and such surface induces p-type surface conductivity.…”

Section: (B)mentioning

confidence: 99%

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Coathup

et al. 2017

Applied Physics Letters

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The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight of p-type to ntype conductivity conversion in O + -implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O + -implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O + -implanted samples is a result of H-terminated diamond grains, while n-type conductive samples is closely correlated to O-terminated O + -implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD film.

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Ozone-treated channel diamond field-effect transistors

Cited by 58 publications

References 10 publications

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

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