An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Xu, Hui; Ye, Haitao; Coathup, David; Mitrović, Ivona Z.; Weerakkody, Ayendra; Hu, Xiaojun

doi:10.1063/1.4974077

Cited by 17 publications

(12 citation statements)

References 49 publications

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“…Furthermore, an n−p-type transformation in Bi 4 V 2 O 11 might occur because of the implanted oxygen, leading to the coexistence of n-and p-type domains. 21 Thereby, a p−n-type photochemical homojunction could be constructed, where the Fermi-level (E f ) alignment of the p-and n-type domains emerges, creating a built-in field. 22 The photogenerated electrons and holes would separate effectively by means of migrating in opposite directions at the homojunction interface, 23 ulteriorly promoting the photocatalysis.…”

Section: Introductionmentioning

confidence: 99%

Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Chen

Zhou

et al. 2017

ACS Appl. Mater. Interfaces

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Bi-self-doped BiVO (Bi-BVO) nanotubes with p-n homojunctions are fabricated via an oxygen-induced strategy. Calcinating the as-spun fibers with abundant oxygen plays a pivotal role in achieving Bi self-doping. Density functional theory calculations and experimental results indicate that Bi self-doping can narrow the band gap of BiVO, which contributes to enhancing light harvesting. Moreover, Bi self-doping endows BiVO with n- and p-type semiconductor characteristics simultaneously, resulting in the construction of p-n homojunctions for retarding rapid electron-hole recombination. Benefiting from these favorable properties, Bi-BVO exhibits a superior photocatalytic performance in contrast to that of pristine BiVO. Furthermore, this is the first report describing the achievement of p-n homojunctions through self-doping, which gives full play to the advantages of self-doping.

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Section: Introductionmentioning

confidence: 99%

Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Chen

Zhou

et al. 2017

ACS Appl. Mater. Interfaces

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“…It is observed that the contact potential of samples increases with T a increasing, implying the loss of negative electron affinity at higher T a . [26] It is probably because of the absence of H-termination of nanocrystalline diamond grains when T a is above 800 o C. [27][28][29] The increasing numbers of conductive sites in samples C12900 and C121000…”

Section: Resultsmentioning

confidence: 99%

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Liu

et al. 2018

Chinese Phys. B

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We have investigated the structural and electrical properties of carbon ion implanted ultrananocrystalline diamond (UNCD) films. The impedance spectroscopy measurements show that impedance value of diamond grains is relatively stable, while that of grain boundaries (R b) dramatically increases after C + implantation and decreases as annealing temperature (T a) increases from 650 to 1000 o C. This means that C + implantation has more significant impact on the conductivity of grain boundaries (GBs). Conductive atomic force microscopy results evidence that the number of conductive sites increases in GB regions at T a above 900 o C, which is originated from the formation of nanographitic phase confirmed by high resolution transmission electronic microscopy. Visible Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at T a above 900 o C, which also results 

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“…This value is in good consistent with those for the nitrogen-doped UNCD films reported in the literature [32], [33], which is strongly influenced by nitrogen quantity incorporated in the UNCD films. Moreover, the latter value was increased by raising the measurement temperature to be in the range of 50-150 meV [34], [35]. It was reported that π-bonded states associated with the GBs are the main reason for the n-type conduction in nitrogen-doped UNCD films [36].…”

Section: B Device Characterizationmentioning

confidence: 98%

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

2021

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Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon (UNCD/a-C:H) composite films, grown on Si substrates by the coaxial arc plasma gun, were investigated using temperature-dependent impedance spectroscopy. The measurements were carried out in frequency and temperature ranges of 100 Hz-2 MHz and 300-400 K, respectively. Structurally, the nitrogen incorporation into the deposited films as well as sp 2 /sp 3 ratio was studied by X-ray photoemission spectroscopy (XPS), measured with synchrotron radiation. The results of temperature-dependent electrical conductance characterization of the examined films revealed that the heterogeneous structure possesses a low-frequency conduction mechanism with an activation energy of 46 meV. This possibly originated from charge carriers hopping in the deposited composite. Furthermore, the results manifested a relaxation process, with an activation energy of 41 meV, originated from space charges in grain boundaries of the films. Cole-Cole plots of measured and fitted impedance spectra exhibited equivalent resistance due to grain boundaries that are much smaller than that related to UNCD grains. This is owing to the nitrogen incorporated in the composite film inside the grain boundaries instead of the grains. This increases the concentration of charge carriers within the grain boundaries and therefore enhances their conductivity. Moreover, the deduced capacitance corresponding to grain boundaries was larger than that originated from the UNCD grains. This is due to the difference between the grain-size and grain-boundary width of the UNCD/a-C:H composite.INDEX TERMS Nitrogen-doping; Coaxial arc plasma gun; Complex impedance spectroscopy, nanodiamond grains; grain boundaries.

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An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Cited by 17 publications

References 49 publications

Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

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An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Cited by 17 publications

References 49 publications

Oxygen-Induced Bi5+-Self-Doped Bi4V2O11 with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Oxygen-Induced Bi5+-Self-Doped Bi4V2O11 with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

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Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance

Oxygen-Induced Bi⁵⁺-Self-Doped Bi₄V₂O₁₁ with a p–n Homojunction Toward Promoting the Photocatalytic Performance