Oxynitride films formed by low energy NO+ implantation into silicon

Diniz, J. A.; Tatsch, Peter Jürgen; Pudenzi, M. A. A.

doi:10.1063/1.117169

Cited by 35 publications

(31 citation statements)

References 11 publications

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“…The IR peak at 610 cm -1 observed in the SRO monolayer (M20) disappeared for the bilayer (B20) and it could be related to the nitrogen incorporation within the SRO that creates Si-N-O-Si bridges. The presence of these bridges decreased the quantity of strained bonds and Si dangling bonds at the SiO 2 /Si-np interface [45]. The SRN/SRO ilm with Ro = 30 (B30) showed the same IR peaks than the B20 bilayer, except for the 610 cm Figure 3(b)).…”

Section: Silicon-rich Nitride/silicon-rich Oxide (Srn/sro) Bilayermentioning

confidence: 80%

“…It has been reported that this shoulder is less pronounced for the suboxides compared to the stoichiometric oxide [43,44]. The absorption at 610 cm -1 due to unsaturated Si-Si bonds (phonon-phonon interactions) was observed only in M20 (SRO ilm with higher proportion of silicon precursor) showing the presence of structural imperfections at the SiO 2 /silicon nanoparticles (Si-nps) interface [45]. …”

Section: Silicon-rich Oxide (Sro) Ilmmentioning

confidence: 99%

“…The intensity of a shoulder (shadow area) from 900 to 1000 cm -1 increased when the B20 bilayer was formed, and it was atributed to the formation of Si-N-O bonds in silicon oxynitride [45].…”

Section: Silicon-rich Nitride/silicon-rich Oxide (Srn/sro) Bilayermentioning

confidence: 99%

See 2 more Smart Citations

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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Section: Silicon-rich Nitride/silicon-rich Oxide (Srn/sro) Bilayermentioning

confidence: 80%

Section: Silicon-rich Oxide (Sro) Ilmmentioning

confidence: 99%

See 1 more Smart Citation

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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“…The absorbance peak of Si-N wagging mode near 460 cm -1 is a predominant spectral features [7,8] of silicon oxynitride films. This peak is clearly appeared in oxynitride films at ~462 cm -1 [6,9] while the absorption band assigned at 1080 cm -1 is associated with the Si-O asymmetrical stretching mode [10,11].…”

Section: Results and Discusionmentioning

confidence: 97%

The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiO<sub>x</sub>N<sub>y</sub> Thin Films

Ismael

2013

ILCPA

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Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiO x N y thin films grown by glass assisted CO 2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm -1 ) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm -1 ) with a FWHM of 73.863 cm -1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiO x N y /Si (111) and SiO x N y /Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 10 13 and 1.57 × 10 13 ev -1 ·cm -2 respectively.

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“…The interest in this new class of materials and subsequent research is by analogy with the incorporation of trivalent nitrogen atoms into the silicate network and the obtaining of silicon oxynitride glasses [1][2][3]. Usually the presence of NSi 3 structural units leads to a higher bond density and it is believed that due to this bond density the oxynitride glass network is strengthened in comparison to the original structure.…”

Section: Introductionmentioning

confidence: 99%

Organic-inorganic hybrid materials based on N=C=O functionalised silan modified with titanium and zirconium

et al. 2005

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This work investigates the influence of the precursor trimethylsilil isocyanate on the sol-gel synthesis of hybrid materials. The obtained Si-O-C-N network is additionally modified by titanium and zirconium alcoxypropoxides in the range of 10 to 30 wt.%. The structure of the obtained hybrid materials before and after pyrolysis up to 1100 • C was investigated by methods of XRD, FTIR and 29 Si MAS NMR. We established that the hybrid structure was stable up to 600 • C based on IR study. The structural transformation of the hybrid materials into oxycarbonitrogen system started at 800 • C. The network of the hybrids modified by titanium remained stable and amorphous up to the final temperature of the pyrolysis (1100 • C) compared to the gels modified by more than 10 wt.% Zr. It was confirmed by XRD analysis that the last mentioned are nanocomposite materials, built from carbooxynitrogen vitreous matrix and ZrO 2 -nanocrystals (tetragonal). The NMR method verified the presence of heterometallic bonds (Si-O-Ti and Si-O-Zr) and Q 4 , ZrQ 3 or TiQ 3 , NSiO 3 and D structural units in the gels.

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Oxynitride films formed by low energy NO+ implantation into silicon

Abstract: A study of low temperature Pd and Ni silicides formed on dry etched silicon surfaces AIP Conf.

Cited by 35 publications

References 11 publications

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Luminescent Devices Based on Silicon-Rich Dielectric Materials

The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiO<sub>x</sub>N<sub>y</sub> Thin Films

Organic-inorganic hybrid materials based on N=C=O functionalised silan modified with titanium and zirconium

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