The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiO_xN_y Thin Films

Abstract

Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiO x N y thin films grown by glass assisted CO 2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm -1 ) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm -1 ) with a FWHM of 73.863 cm -1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiO x N y /Si (111) and SiO x N y /Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 10 13 and 1.57 × 10 13 ev -1 ·cm -2 respectively.

Optical and tribo-mechanical characterization in metal-ceramic multilayers coatings

“…Only the coating A to appear the low frequencies ∼ 1459 cm −1 of double bond oxygen-carbon (C=O) stretching vibration band, [19,20]. On the other hand, the band absorption assigned ∼ 1650 cm −1 , represents N-H bending vibrations, [21,23].…”