2011
DOI: 10.1016/j.physleta.2010.12.063
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Oxygen vacancy in LiTiPO5 and LiTi2(PO4)3: A first-principles study

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Cited by 30 publications
(10 citation statements)
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“…It was reported previously by Jung and coauthor that the rising of VBM and the reduced of band gap over anatase TiO 2 from O-terminated surface to Ti-termination surface has been observed image by the scanning tunneling microscopy54. The band gap of LiTi 2 (PO 4 ) 3 significantly reduced due to the formation of oxygen–vacancy states above the valence band, under poor oxygen conditions55. And our group also has been found that the surface oxygen-defects states will be generated on the VBM for ZnO and BiPO 4 through experimental and theoretical calculation28293056.…”
Section: Resultsmentioning
confidence: 84%
“…It was reported previously by Jung and coauthor that the rising of VBM and the reduced of band gap over anatase TiO 2 from O-terminated surface to Ti-termination surface has been observed image by the scanning tunneling microscopy54. The band gap of LiTi 2 (PO 4 ) 3 significantly reduced due to the formation of oxygen–vacancy states above the valence band, under poor oxygen conditions55. And our group also has been found that the surface oxygen-defects states will be generated on the VBM for ZnO and BiPO 4 through experimental and theoretical calculation28293056.…”
Section: Resultsmentioning
confidence: 84%
“…An appropriate amount of oxygen vacancies are known to enhance the separation efficiency of the photoinduced carriers and narrow the energy gap by the formation of oxygen vacancy states in the band gap. 102,103 The effects also exist in BiPO 4 , as illustrated in Fig. 10.…”
Section: O Vacanciesmentioning
confidence: 88%
“…For all the electronic structure calculations, we used the Vienna Ab initio Simulation Package (VASP) based on plane-wave DFT. Generalized gradient approximation (GGA) of PBE was employed, and the core–valence electron interaction was treated using the projector-augmented wave, with the following valence electrons: 1s 2 2s 1 for Li, 3d 8 4s 1 for Co, 2s 2 2p 4 for O, 3s 2 3p 1 for Al, 3d 3 4s 1 for Ti, and 3s 2 3p 3 for P. To describe the d-electrons of Co, we used a Hubbard U value of 4.91 eV (GGA + U ) based on previous studies. , According to other studies, , it may not be necessary to use the U parameter for Ti in LATP as Ti is an early-transition metal. The convergence criteria for the electronic minimization are set at the energy difference of 10 –5 eV.…”
Section: Methodsmentioning
confidence: 99%