1987
DOI: 10.1016/0038-1098(87)90572-2
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Oxygen vacancy centres induced by electron irradiation in LiNbO3

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Cited by 62 publications
(40 citation statements)
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“…A similar picture has been observed in LiNbO 3 [19] and TeO 2 [20]. However, in the case of fast electron irradiation with energies above 300 KeV in both materials Hodgson et al [21,22] have observed a broad band in visible spectrum range probably due to F-type centre (oxygen vacancy). It is interesting to notice that for instance in MgO and Al 2 O 3 F-type centres can be created not only under the electron irradiation [23,24], but also under irradiation with di erent ions [25±27].…”
Section: Resultssupporting
confidence: 66%
“…A similar picture has been observed in LiNbO 3 [19] and TeO 2 [20]. However, in the case of fast electron irradiation with energies above 300 KeV in both materials Hodgson et al [21,22] have observed a broad band in visible spectrum range probably due to F-type centre (oxygen vacancy). It is interesting to notice that for instance in MgO and Al 2 O 3 F-type centres can be created not only under the electron irradiation [23,24], but also under irradiation with di erent ions [25±27].…”
Section: Resultssupporting
confidence: 66%
“…The concentrations of displaced cations or oxygen ions calculated for unit fluence ( /F ) increased initially with the particles energy and then they saturate for the electron and neutron energy of 50-500 MeV. The growth of induced absorption (connected exactly with displacement defects) was previously experimentally observed as a function of electron energy, for example in electron irradiated LNO (lithium niobate) crystals [18]. Also, it was shown by calculation in work [10] that this tendency is typical for oxide crystals.…”
Section: Resultsmentioning
confidence: 60%
“…The same tendency was observed for the oxygen ions, but in the case of electron irradiation the saturation is weaker and starts for higher particle energy (for the purpose of this work this energy (E si ) will be called as "saturation energy", where "i" denote of sublattice). The growth of induced absorption (connected exactly with displacement defects) was previously observed as a function of electron energy for example in electron irradiated LNO crystals [22]. The concentrations of displaced oxygen ions in Gd 3 [21,25,26].…”
Section: Resultsmentioning
confidence: 99%
“…The T d values for ions in oxide crystals are in the range 10-100 eV (40-47 eV for oxygen ion) [18][19][20][21][22]. Because for ions composing the oxide crystals the A values are not exceeding 175, then for the ultra-relativistic electrons or fast neutrons the T max can be few orders of magnitude larger than T d .…”
Section: Calculation Of Concentration Of the Radiation Displacemementioning
confidence: 99%