Oxygen-transport phenomena in a small silicon Czochralski furnace

Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process

“…The temperature at the center of the free surface is slightly higher at the lower furnace pressure. When the furnace pressure is higher, the amount of vaporized SiO decreases with the fixed temperature and oxygen concentration, according to the boundary conditions [12]. Therefore, the SiO concentration in the argon gas is smaller when the furnace pressure is higher.…”

“…The concentration correlation between the SiO partial pressure and argon is where P Ar is the furnace pressure and C Ar is the argon concentration, and the partial pressure of SiO [12] is given by…”

“…Many investigators have studied the transport phenomenon of oxygen impurities in a silicon melt in a Czochralski growth system numerically [7][8][9][10][11][12][13][14][15]. Recently Gao et al [16] performed a numerical study of the effect of the argon gas flow rate and pressure on oxygen concentration in a unidirectional solidification furnace.…”

Silicon bulk growth for solar cells: Science and technology

“…[11][12][13][14][15][16][17][18][19][20][21][22] Some of these previous investigations included only local simulations [11][12][13][14][15][16][17] that neglected the mass transport of the impurities in the gas phase. In other cases, the reported simulations included results of global simulations, [18][19][20][21] some of which only neglected mass transport of oxygen and carbon in the melt, 18) whereas others neglected carbon transfer for both the gas and the silicon melt. [19][20][21] The literature contains no reports of simulations that account for both the oxygen and carbon impurities in both the gas and the silicon melt.…”

Numerical analysis of light elements transport in a unidirectional solidification furnace

“…There have been a few studies using global simulations [8][9][10][11], however, they neglected the calculation of mass transfer of both the oxygen and carbon impurities in the silicon melt and gas phase. Almost all of the global simulations about impurities [8][9][10][11] were based on the Czochralski method; there has been no simulation based on the unidirectional solidification method for solar cells. Therefore, a global simulation in a unidirectional solidification furnace that considers all of the processes in crystal growth is needed.…”