Oxygen transport and GeO2 stability during thermal oxidation of Ge

Silva, S. R. M. da; Rolim, Guilherme Koszeniewski; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Krug, Cristiano; Miotti, Leonardo; Freire, F. L.; Costa, M.E.H. Maia da; Radtke, C.

doi:10.1063/1.4712619

Cited by 35 publications

(20 citation statements)

References 23 publications

(59 reference statements)

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“…This assumption seems to be in contradiction with the results of GeO 2 /Si samples where the maximum D uptake is almost identical to the value measured for GeO 2 /Ge samples (Fig. 2) (no V O is formed at the GeO 2 /Si interface as evidenced by isotopic tracing studies 26 ). Besides, GeO 2 volatilization should be suppressed when GeO 2 is deposited on Si substrates.…”

contrasting

confidence: 52%

“…However, the two set of data seem to be shifted in the horizontal axis, reflecting the role of the semiconductor substrate. Since GeO 2 is more stable on Si than on Ge, 26 due to the absence of V O production at the GeO 2 /Si interface, lower GeO 2 volatilization is expected at the high temperature range (>450 C). This effect may explain the higher D uptake observed for Si samples.…”

mentioning

confidence: 99%

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GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Bom

Soares

Hartmann

et al. 2014

Applied Physics Letters

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Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

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confidence: 52%

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confidence: 99%

GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Bom

Soares

Hartmann

et al. 2014

Applied Physics Letters

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“…11,14 One possible reason for the production of Ge oxides with high oxidation states is that oxygen diffusion into oxides is dominant at high temperature. 46 This oxygen transport mechanism involved in the thermal Ge oxidation may facilitate oxidation and prevent GeO desorption relevant to GeO 2 decomposition. The kinetic balance between the growth of oxides and the GeO desorption processes seems to be a key mechanism under high-temperature and low-pressure oxidation, resulting in the difference between our experimental results and previous high-pressure work.…”

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confidence: 99%

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O2) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O2. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge2+ and a higher final oxygen coverage. We demonstrated that hyperthermal O2 beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

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“…Ge oxidation has so far been assumed to follow the Deal-Grove model [2], as the structure of GeO2 is similar with that of SiO2. However, different aspects between Si and Ge oxidations have been revealed thermodynamically and experimentally in recent years [3][4][5][6][7], and the oxidation kinetics is not clear. Thus, a kinetic model for Ge oxidation with direct experimental results is needed now.…”

Section: Introductionmentioning

confidence: 99%