A new kinetic model for thermal oxidation of Ge

Wang, X.

doi:10.7567/ssdm.2017.k-3-01

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials 2017

DOI: 10.7567/ssdm.2017.k-3-01

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A new kinetic model for thermal oxidation of Ge

X. Wang¹

Abstract: Oxidant diffusion behavior in GeO2 during Ge oxidation was investigated by re-oxidation experiments of SiO2/GeO2 stacked oxide-layer. A new kinetic model which is different from the Deal-Grove mechanism is proposed for thermal oxidation of Ge.

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A new kinetic model for thermal oxidation of Ge

Abstract: Oxidant diffusion behavior in GeO2 during Ge oxidation was investigated by re-oxidation experiments of SiO2/GeO2 stacked oxide-layer. A new kinetic model which is different from the Deal-Grove mechanism is proposed for thermal oxidation of Ge.

Cited by 0 publications

References 5 publications

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