Oxygen-Related Defect Centers in 4H Silicon Carbide

Dalibor, T.; Pensl, Gerhard; Yamamoto, Takuya; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Sridhara, S.G.; Nizhner, D.G.; Devaty, Robert P.; Choyke, W. J.

doi:10.4028/www.scientific.net/msf.264-268.553

Cited by 18 publications

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“…The chemical potentials of silicon, Si The determination of O requires more consideration. Oxygen-related DLTS signals were found in samples which were implanted with oxygen 4,5 or were CVD grown in a CO 2 -containing environment. 6 Only the latter can be regarded as a quasiequilibrium process but it is very difficult to estimate O in a mixture of silane, propane, and CO 2 .…”

Section: Model and Calculational Methodsmentioning

confidence: 99%

“…Experimental data on oxygen in 4H-and 6H-SiC show little difference. 4,5 Only limited information is available about oxygen in bulk SiC. Dalibor et al implanted O ϩ into chemical vapor deposited ͑CVD͒ n-and p-type 4H and 6H-SiC epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

“…Dalibor et al implanted O ϩ into chemical vapor deposited ͑CVD͒ n-and p-type 4H and 6H-SiC epitaxial layers. 4,5 Deep level transient spectroscopy ͑DLTS͒ has shown that two groups of shallow donorlike oxygen-related centers had been created with ionization energies at E v ϩ(2.85-2.87) eV and E v ϩ(2.80-2.82) eV in 6H, and at E v ϩ(2.99-3.03) eV and E v ϩ(2.84-2.88) eV in 4H-SiC. The values of the ionization energies were dependent on the implanted oxygen dose and on the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Three deep acceptorlike oxygenrelated centers with levels in the range between E v ϩ2.4 and E v ϩ2.6 eV have been found both in 6H-and 4H-SiC samples implanted with oxygen. 4,5 It was speculated that the origin of these levels might be oxygen at the silicon site in analogy to the A center in silicon. The same donor and acceptor levels have also been found in CVD epitaxial layers grown in an environment containing CO 2 gas.…”

Section: Introductionmentioning

confidence: 99%

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Isolated oxygen defects in3C- and4H-SiC: A theoretical study

et al. 2002

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Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O C ) and a hyperdeep double donor on the Si site (O Si ). In 4H-SiC O C is still a double donor but with a more localized electron state. In 3C-SiC O C is substantially more stable under any condition than O Si or interstitial oxygen (O i ). In 4H-SiC O C is also the most stable one except for heavy n-type doping. We propose that O C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO 2 interface are discussed.

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Section: Model and Calculational Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Isolated oxygen defects in3C- and4H-SiC: A theoretical study

et al. 2002

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“…In the same temperature range in which we carried out DLTS measurements, it has been showed that oxygen related defect centres in 4H-SiC occupy shallower levels than what we have observed. 35 We therefore rule out produced oxides as causatives of the observed defects. From the SEM micrographs, the agglomeration of crystals and formation of cavities are consistent with previous morphological observations where tungsten migrated into Si and SiC.…”

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confidence: 99%

Defects induced by solid state reactions at the tungsten-silicon carbide interface

Tunhuma

Diale

Legodi

et al. 2018

Journal of Applied Physics

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Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally annealed in the 100–1100 °C temperature range. Phase composition transitions and the associated evolution in the surface morphology were investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM). After annealing at 1100 °C, the E0.08, E0.15, E0.23, E0.34, E0.35, E0.61, E0.67, and E0.82 defects were observed. Our study reveals that products of thermal reactions at the interface between tungsten and n-4H-SiC may migrate into the semiconductor, resulting in electrically active defect states in the bandgap.

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silicon carbide (SiC), energy levels and capture cross sections, identified defect centers

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part B: Group IV-IV and III-V Compounds.

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Oxygen-Related Defect Centers in 4H Silicon Carbide

Cited by 18 publications

References 0 publications

Isolated oxygen defects in3C- and4H-SiC: A theoretical study

Isolated oxygen defects in3C- and4H-SiC: A theoretical study

Defects induced by solid state reactions at the tungsten-silicon carbide interface

silicon carbide (SiC), energy levels and capture cross sections, identified defect centers

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