Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors

Liu, A.; Zhang, Q.; Liu, G. X.; Liu, J. Q.; Lee, W. J.; Shin, Byoungchul; Bae, Jong‐Sup

doi:10.1007/s10832-014-9904-6

Cited by 9 publications

(6 citation statements)

References 24 publications

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“…No evident diffraction peak of crystalline phase was observed from the spectrum, except for the peak at 21.4

to 21.5

attributed to quartz substrate. The result was similar to the report of A. Liu et al in 2014 [ 23 ]. There is a weak peak located at around 32

, which may be attributed to ZnO crystal (JCPDS #890510).…”

Section: Resultssupporting

confidence: 92%

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Hsu

Chang

et al. 2017

Nanomaterials

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Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

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“…No evident diffraction peak of crystalline phase was observed from the spectrum, except for the peak at 21.4

to 21.5

attributed to quartz substrate. The result was similar to the report of A. Liu et al in 2014 [ 23 ]. There is a weak peak located at around 32

, which may be attributed to ZnO crystal (JCPDS #890510).…”

Section: Resultssupporting

confidence: 92%

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Hsu

Chang

et al. 2017

Nanomaterials

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“…The pulsed laser deposition (PLD) technique is advantageous for the study of oxygen surface exchange kinetics given its ability to prepare high-quality complex oxide thin films, with well-defined geometry and known active surface area. − In this work, PLD was used to prepare model thin film electrodes with nanoscale thickness and controllably varied microstructure and crystallinity. Recently, amorphous thin films have attracted attention because of their advantages of uniformity and low fabrication temperature, which enable predictable behavior and low-energy processing on thermally sensitive substrates and devices. , Such amorphous films have applications in, e.g., electronics as thin film transistors, , memristors, and dielectrics, , and in photovoltaics as electron and hole transport layers. , The widespread potential applications of amorphous and nanocrystalline thin films, combined with the need to often process these film components within a limited thermal budget, have also driven interest in their crystallization behavior . For example, Heiroth et al have reported that crystallization temperatures can be decreased by annealing amorphous thin films, compared with directly depositing highly crystalline thin films by PLD .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, amorphous thin films have attracted attention because of their advantages of uniformity and low fabrication temperature, which enable predictable behavior and low-energy processing on thermally sensitive substrates and devices. 13,14 Such amorphous films have applications in, e.g., electronics as thin film transistors, 15,16 memristors, 17 and dielectrics, 18,19 and in photovoltaics as electron and hole transport layers. 20,21 The widespread potential applications of amorphous and nanocrystalline thin films, combined with the need to often process these film components within a limited thermal budget, have also driven interest in their crystallization behavior.…”

Section: Introductionmentioning

confidence: 99%

Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides

Chen

Harrington

Masood

et al. 2019

ACS Appl. Mater. Interfaces

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The oxygen surface exchange kinetics of mixed ionic and electronic conducting oxides (MIECs) play a critical role in the efficiency of intermediate-to-high-temperature electrochemical devices. Although there is increasing interest in low-temperature preparation of MIEC thin films, the impact of the resultant varied degrees of crystallinity on the surface exchange kinetics has not been widely investigated. Here, we probe the effect of crystallization on oxygen surface exchange kinetics in situ, by applying an optical transmission relaxation (OTR) approach during annealing of amorphous films. OTR enables contact-free, in situ, and continuous quantification of the oxygen surface exchange coefficient (k chem ); we previously applied it to Pr x Ce 1−x O 2−δ and SrTi 1−x Fe x O 3−δ thin films. In this work, the OTR approach was successfully extended to other mixed conducting thin film compositions for the first time (i.e., perovskite SrTi 0.65 Co 0.35 O 3−δ and Ruddlesden−Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ ), as well as to Pr 0.1 Ce 0.9 O 2−δ , enabling quantification of the k chem of their native surfaces and comparison of the behavior of films with different final crystal structures. All thin films were prepared by pulsed laser deposition at 25 or 700−800 °C and subject to subsequent thermal treatments with simultaneous OTR monitoring of k chem . The surface roughness, grain size, and crystallinity were evaluated by scanning probe microscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Fluorite Pr 0.1 Ce 0.9 O 2−δ films grown at 25 °C did not exhibit an increase in k chem after annealing, as they were already crystalline as grown at 25 °C. For all other compositions, OTR enabled in situ observation of both the crystallization process and the emergence of rapid surface exchange kinetics immediately upon crystallization. Perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden−Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ thin films grown at 25 °C exhibited at least 1−2 orders of magnitude enhanced k chem after annealing compared with highly crystalline thin films grown at 800 °C, indicating the benefits of in situ crystallization.

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“…From Table 1 , HfO 2 -500 shows us the smallest value of SS of In 2 O 3 TFT, which is mostly useful from high areal capacitance and the smooth interface between In 2 O 3 and HfO 2 layers. Based on the sub-threshold swing value, the Dit interface density states can be calculated using Equation (6) [ 36 ].

where k, T, and q are Boltzman’s constant, absolute temperature, and charge feature, respectively.…”

Section: Resultsmentioning

confidence: 99%

All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

Alam

Yan

et al. 2023

Nanomaterials

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In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT). All the electrical properties of In2O3 based on HfO2 were systematically analyzed. The In2O3/HfO2 device exhibits the best electrical performance at an optimized annealing temperature of 500 °C, including a high µFE of 9 cm2 V−1 s−1, a high ION/IOFF of 105, a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec−1. Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (VTH) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.

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Oxygen pressure dependence of Ti-doped In-Zn-O thin film transistors

Cited by 9 publications

References 24 publications

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides

All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

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