Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Advanced development of metal oxide nanomaterials for H2gas sensing applications

“…The distance between the target and the substrate, sputtering pressure, sputtering time, annealing temperature, sputtering power, and other conditions can directly influence the structure and properties of the formed films. 160 For instance, Abubakar et al 149 CVD is another kind of technology that the precursors react with each other in gas atmosphere, then the materials are deposited on the surface of the heated solid matrix.…”

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

“…[19][20][21]. To date, NiO has been widely studied in various domains, such as photoanodes [22], electrochromic materials [23], gas sensors [24], and photoelectrochemical cells [25,26]. The reported optoelectronic properties of NiO films are compared in Table 1.…”

Metal Oxide Semiconductor: Future Material For Gas Sensors And It’s Synthesis Techniques

“…Surface morphology and crystalline structure is hugely dependent upon the oxygen partial pressure effect. The granule size is 70 nm when the sample is grown on the moderate O 2 partial pressure whereas the granule size is reduced to 50 nm at higher partial pressure [23]. Behera et al used sputtering technique to deposit a 100 nm thickness Tungsten metal film on SiO 2 coated Si substrate.…”