2020
DOI: 10.1016/j.jallcom.2019.152565
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Oxygen partial pressure dependent UV photodetector performance of WO3 sputtered thin films

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Cited by 66 publications
(21 citation statements)
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“…When comparing the XPS O1 spectra of the initial nanotubes and the WC1-x/MWCNT composite shown in Figure 9b, the additional intense O peak (530.4 eV) is observed. The energy position of this peak is in good agreement with the main peak in the WO3 spectra [85,86]. This suggests that, in addition to the WC1-x bulk layer, a tungsten oxide layer forms on the composite surface.…”
Section: Xps Research Of the Nanocomposites And Initial Mwcntssupporting
confidence: 74%
“…When comparing the XPS O1 spectra of the initial nanotubes and the WC1-x/MWCNT composite shown in Figure 9b, the additional intense O peak (530.4 eV) is observed. The energy position of this peak is in good agreement with the main peak in the WO3 spectra [85,86]. This suggests that, in addition to the WC1-x bulk layer, a tungsten oxide layer forms on the composite surface.…”
Section: Xps Research Of the Nanocomposites And Initial Mwcntssupporting
confidence: 74%
“…Thanks to heterogeneous photocatalysis studies, it was discovered that many of the metal oxide materials have their principal optical and electronic transitions in the near-UV region of the electromagnetic spectrum (E λ = 2.5-5 eV). For example, ZnO, TiO 2 and SnO 2 exhibit a bandgap of 3.5-3.7 eV [86], 3.0-3.2 eV [87], and 3.6 eV [88], respectively. The adsorbed light can affect the electrical properties of semiconducting materials by creating free carriers by either intrinsic or extrinsic optical adsorption [89].…”
Section: Surface Photoactivationmentioning
confidence: 99%
“…These materials have been used in light-emitting diodes, sensors, transistors, lasers, displays, photodetectors, highpowered devices, solar cells, memory and so on [1][2][3][4][5][6][7][8]. Given their wide bandgap, inorganic oxide-based semiconductor materials, such as In2O3 (3.7 eV), Ga2O3 (4.9 eV), ZnO (3.37 eV), NiO (3.9 eV) and WO3 (2.8 eV) have been utilised for optoelectronic devices [9][10][11][12]. Among these materials, ZnO is a popular inorganic substance owing to its excellent characteristics, such as high exciton binding energy (60 meV), high stability of thermal and chemical, high mechanical strength, simple processing, nontoxicity, low cost and various nanostructures (e.g.…”
Section: Introductionmentioning
confidence: 99%