2020
DOI: 10.1016/j.carbon.2020.05.064
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Oxygen intercalated graphene on SiC(0001): Multiphase SiOx layer formation and its influence on graphene electronic properties

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Cited by 11 publications
(5 citation statements)
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“…Several possible reasons have been proposed to explain this phenomenon and have been applied to the interlayer spacing engineering of 2D materials, such as in-plane stress and atomic intercalation. [51][52][53][54] The interlayer spacing of carbon materials gradually decreases with the removal of defects. [55] In contrast, the interlayer spacing of graphene-like carbon in the near-surface/interface region is only 0.37 nm; this is similar to that of SiC epitaxial graphene and in situ generated graphene in the PDC bulk (0.34-0.37 nm).…”
Section: Nanodomain Morphologies Of Sicn Filmmentioning
confidence: 99%
“…Several possible reasons have been proposed to explain this phenomenon and have been applied to the interlayer spacing engineering of 2D materials, such as in-plane stress and atomic intercalation. [51][52][53][54] The interlayer spacing of carbon materials gradually decreases with the removal of defects. [55] In contrast, the interlayer spacing of graphene-like carbon in the near-surface/interface region is only 0.37 nm; this is similar to that of SiC epitaxial graphene and in situ generated graphene in the PDC bulk (0.34-0.37 nm).…”
Section: Nanodomain Morphologies Of Sicn Filmmentioning
confidence: 99%
“…In addition, a DOS singularity is already present in the band structure of graphene at a saddle point in the unoccupied energy region far from the Dirac point (neutrality), known as the van Hove singularity (VHS) [21]. Thus, an efficient alternative route to reach such DOS singularity is to overdope the quasifreestanding monolayer of graphene, bringing E F at VHS [22][23][24][25][26][27][28]. However, since it was considered too far in energy from the Dirac point to be accessible by chemical doping or gating, much of the attention shifted to twisted systems [29].…”
mentioning
confidence: 99%
“…Note that there is no peak around the Fermi level for both graphene spectra as could be observed for an oxidized sample. Indeed, this type of peak could be the signature of oxygen incorporation in the SiC substrate [29]. As there is no peak, we can assume that our samples have not been in a condition to be oxidized (simultaneously exposed to O 2 and high temperature) as already mentioned in Sec.3.2.2.…”
Section: Spectroscopy and Dos Near The Fermi Levelmentioning
confidence: 89%