We investigate the 1/3 monolayer α-Pb/Si(111) surface by scanning tunneling spectroscopy (STS) and fully relativistic first-principles calculations. We study both the high-temperature sqrt[3]×sqrt[3] and low-temperature 3×3 reconstructions and show that, in both phases, the spin-orbit interaction leads to an energy splitting as large as 25% of the valence-band bandwidth. Relativistic effects, electronic correlations, and Pb-substrate interaction cooperate to stabilize a correlated low-temperature paramagnetic phase with well-developed lower and upper Hubbard bands coexisting with 3×3 periodicity. By comparing the Fourier transform of STS conductance maps at the Fermi level with calculated quasiparticle interference from nonmagnetic impurities, we demonstrate the occurrence of two large hexagonal Fermi sheets with in-plane spin polarizations and opposite helicities.
The successful fabrication of one monolayer FeSe on SrTiO3 represented a real breakthrough in searching for high-Tc Fe-based superconductors (Ref. 1 ). Motivated by this important discovery, we studied the effects of tensile strain on one monolayer and bulk iron-chalcogenide superconductors (FeSe and FeTe), showing that it produces important magnetic and electronic changes in the systems. We found that the magnetic ground state of bulk and monolayer FeSe is the block-checkerboard phase, which turns into the collinear stripe phase under in plane tensile strain. FeTe, in both bulk and monolayer phases, shows two magnetic transitions upon increasing the tensile strain: from bicollinear in the ground state to block-checkerboard ending up to the collinear antiferromagnetic phase which could bring it in the superconducting state. Finally, the study of the mechanical properties of both FeSe and FeTe monolayers reveals their enormous tensile strain limits and opens the possibility to grow them on different substrates. arXiv:1501.03630v1 [cond-mat.supr-con]
Two-dimensional superconductivity in alkali- and alkaline-Earth-metal doped monolayer graphene has been explained in the framework of electron–phonon coupling (EPC) and experiments yielded superconducting transition temperatures (TC) up to 6 K. In contrast to bulk graphite intercalation compounds, the interface of doped graphene with its environment affects its physical properties. Here we present a novel and well-defined BaC8 interface structure in Ba-doped single-layer graphene on Au and Ge substrates. We use angle-resolved photoemission spectroscopy in combination with ab initio modelling to extract the Eliashberg function and EPC for both substrates. This allows us to quantitatively assess the environmental effects for both Au and Ge substrates on superconductivity in graphene. We show that for semiconducting Ge substrates, the doping level and EPC are higher. Our study highlights that both dopant order and the metallicity of the substrate can be used to control EPC and hence superconductivity.
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity, and topological properties. Their physical properties can be controlled by doping in electric double‐layer field‐effect transistors (FET). However, for the case of single layer NbSe2, FET doping is limited to ≈1 × 1014 cm−2, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing angle‐resolved photoemission spectroscopy, scanning tunneling microscopy, quasiparticle interference measurements, and first‐principles calculations it is shown that a misfit compound formed by sandwiching NbSe2 and LaSe layers behaves as a NbSe2 single layer with a rigid doping of 0.55–0.6 electrons per Nb atom or ≈6 × 1014 cm−2. Due to this huge doping, the 3 × 3 charge density wave is replaced by a 2 × 2 order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, this work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.
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