Warp behavior of silicon wafers is a complex function of surface effects, bulk effects, and processing conditions. Deposition or growth of thin films has the most dramatic impact, due to intrinsic or thermal expansion induced stresses. Once a film has been deposited, its reaction during subsequent thermal or mechanical processes will alter its ability to influence warp of the substrate wafer. The warpage behavior can be controlled using a balance of films on the backside of the wafer to counteract device film effects. In addition, care must be taken during thermal processing, notably push/pull temperatures and rates. After precipitation of oxygen has occurred, the wafer may be more susceptible to such factors.Epitaxial deposition can also influence warpage. This is partly due to lattice mismatch, thermal expansion, and intrinsic stresses within the epitaxial layer. These forces will differ depending on the particular substrate and epitaxial layer being used. Pre-epitaxial nucleation annealing via backside film depositions results in enhanced oxygen precipitation over conventional epitaxial deposition early in CMOS processing. The presence of oxygen precipitation was shown not to influence warpage for this process.