Oxygen-induced metal-insulator-transition on single crystalline metal oxide wires

Berengue, Olívia M.; Amorim, Cleber A.; Kamimura, Hanay; Chiquito, A. J.; Leite, E. R.

doi:10.1063/1.3675204

Cited by 12 publications

(11 citation statements)

References 25 publications

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“…8a represents the variation of ln ρ as a function of T −1/4 , and a linear variation is observed in the 21-82 K temperature range. This result is very similar to that recently reported in the case of single crystalline In 2 O 3 nanowires [42]. In this frame, the carrier localisation at the origin of the MST would be due to the structural disorder in the In 2 O 3 films grown at 200 1C.…”

Section: Resultssupporting

confidence: 80%

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Epitaxial undoped indium oxide thin films: Structural and physical properties

Seiler

Nistor

Hébert

et al. 2013

Solar Energy Materials and Solar Cells

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10 −2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth and stoichiometric In 2 O 3 films, with the cubic bixbyite structure. Epitaxial thin films were obtained at substrate temperatures as low as 200 1C. Pole figure measurements indicate the existence of (111) oriented In 2 O 3 crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the specificities of the growth method which can induce a large disorder in the oxygen network of In 2 O 3 , leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metal-semiconductor transition at low temperature for In 2 O 3 films grown at 200 1C, while the classical semiconductor behaviour was observed for the films grown at 400 and 500 1C. A maximum mobility of 24.7 cm 2 /V s was measured at 200 1C, and then it falls off with improving the crystalline quality of films. The optical transparency is high (480%) in a spectral range from 500 nm to 900 nm.

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Section: Resultssupporting

confidence: 80%

“…In that case, the low temperature resistivity is generally interpreted by Eq. (1) as Mott's variable-range hopping (VRH) caused by localised states in a disordered oxide films [35,42].…”

Section: Resultsmentioning

confidence: 99%

Epitaxial undoped indium oxide thin films: Structural and physical properties

Seiler

Nistor

Hébert

et al. 2013

Solar Energy Materials and Solar Cells

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“…Figure (c) displays the temperature dependence of the sheet resistance of the irradiated TiO 2 , in which the resistance increases with the temperature. The variation of R s ( T ) between 80 and 120 K can be best fitted to

R_{S} true(T true) = R_{0} \exp {(\frac{T_{0}}{T})}^{\frac{1}{3}},

where R 0 and T 0 are 13.6 Ω and 2.16 K, respectively. That means the conduction in this temperature range is governed by hopping from a localized state to another localized state at the disordered surface of oxide, usually called Mott's variable‐range hopping.…”

mentioning

confidence: 99%

Spin to Charge Conversion at the Conducting TiO₂Surface

Wang

Zhang

Peng

et al. 2017

Phys. Status Solidi RRL

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The insulating TiO2 (100) surface was transformed into conducting state after Ar+ ion irradiation, which is due to the formation of oxygen vacancies. The thickness of the conducting layer is about 5 nm according to the transmission electron microscopy, and its surface with a spatial asymmetry hosts Rashba spin–orbit coupling. A permalloy (Py) thin film was then deposited onto the irradiated TiO2 by magnetron sputtering. In this Py/TiO2 sample, an inverse Rashba–Edelstein effect (IREE) induced voltage was detected, which converted the spin current injected from Py by spin pumping into the charge current (voltage) due to the spin–orbit coupling. Through the two‐step measurement with sample flipping, the voltages of the IREE at different microwave frequency and power are separated from the spin rectification effect in the Py films. The inverse Rashba–Edelstein length λIREE, which is used to characterize the spin‐to‐charge current conversion efficiency, is calculated to be about 0.58 nm in this work. From the similarity of the parameter, we may conclude that the effect is universal in these two dimensional electron gas hosted by the surfaces or interfaces.

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“…Another peculiarity of indium oxide based materials is relatively easy variation of the oxygen content in samples by means of the thermal treatment procedure (TTP) at not too high temperatures (250-300 0 C) in ambient gas atmosphere with different partial pressures of oxygen [24,26]. Oxygen deficiency leads to an increase of the free electron density.…”

Section: Introductionmentioning

confidence: 99%

“…Single crystal samples were performed as nanowhiskers with a microscopic length [21,22], nanowires [23,24], nanocones and stripes with very small thickness and width of several nanometers [25]. Investigations of microscopic size plates are presented in a recent paper [26].…”

Section: Introductionmentioning

confidence: 99%

Macro- and microscopic properties of strontium doped indium oxide

Nikolaenko

Kuzovlev

Medvedev

et al. 2014

Journal of Applied Physics

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Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In 2 O 3 :(SrO) x were investigated for materials with different doping levels at different temperatures (T=20-300 0 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn 2 O 4 . An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 0 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electrodiffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3×10 -13 cm 2 /s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

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Oxygen-induced metal-insulator-transition on single crystalline metal oxide wires

Cited by 12 publications

References 25 publications

Epitaxial undoped indium oxide thin films: Structural and physical properties

Epitaxial undoped indium oxide thin films: Structural and physical properties

Spin to Charge Conversion at the Conducting TiO₂Surface

Macro- and microscopic properties of strontium doped indium oxide

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Oxygen-induced metal-insulator-transition on single crystalline metal oxide wires

Cited by 12 publications

References 25 publications

Epitaxial undoped indium oxide thin films: Structural and physical properties

Epitaxial undoped indium oxide thin films: Structural and physical properties

Spin to Charge Conversion at the Conducting TiO2Surface

Macro- and microscopic properties of strontium doped indium oxide

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Product

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About

Spin to Charge Conversion at the Conducting TiO₂Surface