Epitaxial undoped indium oxide thin films: Structural and physical properties

Seiler, Wilfrid; Nistor, Magda; Hébert, Christian; Perrière, J.

doi:10.1016/j.solmat.2013.04.002

Cited by 43 publications

(39 citation statements)

References 41 publications

(65 reference statements)

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“…This specific behavior, i.e. a VRH model describing the insulating side has been recently reported in the case of various oxide films and nanostructures [46,47]. This VRH mechanism was checked for the resistivity curves via the variations of ln (ρ(T)) as a function of (1/T) 1/4 , which are presented in the inset in figure 5(c).…”

Section: Resultssupporting

confidence: 59%

Transparent conductive Nd-doped ZnO thin films

Nistor¹,

Millon²,

Cachoncinlle³

et al. 2015

J. Phys. D: Appl. Phys.

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. Any correspondence concerning this service should be sent to the repository Administrator : archiveouverte@ensam.eu IntroductionDue to its specific electrical and optical properties (high electrical conductivity and high optical transparency in the visible domain), zinc oxide (ZnO) is a suitable material with applications in a large number of devices and components such as optical waveguides, piezoelectric transducers, transparent conductive electrodes, gas sensors, light emitting diodes, and others [1][2][3][4][5][6]. Moreover, because it is abundant and environmentally friendly, ZnO is an ideal wide bandgap material for applications in photovoltaics (PV). The ability to easily tune the conductivity, charge carrier concentration, and optical properties of ZnO films is highly desirable for these applications. Doping by well-suited elements is a way to modify or enhance physical properties or to induce new ones in oxide films [5][6][7][8][9]. In this frame, the best doping of ZnO thin films for both electrical conductivity and optical transparency comparable with those of the indium-tin oxide ( AbstractTransparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10 −4 Ω cm and 90% optical transmittance in the visible range and different nearinfrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.

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Section: Resultssupporting

confidence: 59%

Transparent conductive Nd-doped ZnO thin films

Nistor¹,

Millon²,

Cachoncinlle³

et al. 2015

J. Phys. D: Appl. Phys.

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“…2 does not permit to choose between the two Ga 2 O 3 phases, the β monoclinic and the orthorhombic phase previously described [25]. To gain more information on the nature of the phase, asymmetric diffraction was used through pole figure measurements [9,29]. Fig.…”

Section: Results and Interpretationsmentioning

confidence: 99%

“…The nature of the phases was investigated either in the Bragg-Brentano mode or in the grazing incidence geometry, and by asymmetric diffraction, i.e., pole figure measurements [9,29]. In this last geometry, the epitaxial relationships between gallium oxide films and single crystal substrates were studied and the precise in-plane orientations between film and substrate were determined.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial growth of gallium oxide films on c-cut sapphire substrate

et al. 2015

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International audienceThe nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the 400–500 °C temperature range. Detailed pole figure measurements on epitaxial films demonstrate that the monoclinic β-Ga2O3 phase grows epitaxially on c-cut sapphire substrates at T = 500 °C under a 10− 5 mbar oxygen pressure. Two distinct textures were evidenced, i.e., the (View the MathML source2¯01) and (101) planes of the monoclinic β-Ga2O3 phase being parallel to the c-cut sapphire substrates. The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy. The differences in the two textures were correlated to the various atomic configurations in the (View the MathML source2¯01) and (101) planes of the monoclinic β-Ga2O3 phase

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“…Recently, researchers have also carried out molecular-beam-epitaxial growth studies of ITO structures [94,95], but the crystal quality obtained was not as high as that previously achieved in the epitaxial films grown by a pulsed-laser deposition technique [96]. We mention in passing that, apart from the bulk properties [97,98], the effect on electronic processes of the surface states due to oxygen vacancies in undoped In 2 O 3−δ [32] as well as doped TCOs [30,31,51] has recently drawn theoretical and experimental attention.…”

Section: Relevant Electronic Parametersmentioning

confidence: 91%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Epitaxial undoped indium oxide thin films: Structural and physical properties

Cited by 43 publications

References 41 publications

Transparent conductive Nd-doped ZnO thin films

Transparent conductive Nd-doped ZnO thin films

Epitaxial growth of gallium oxide films on c-cut sapphire substrate

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

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