1995
DOI: 10.1007/bf02676833
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Oxygen incorporation, photoluminescence, and laser performance of AlGaAs grown by organometallic vapor phase epitaxy

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Cited by 4 publications
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“…Sampled grating (SG) distributed Bragg reflector (DBR) lasers based on InP are well established offering wide tuning ranges around 1.3 and 1.55 µm [1]. For the short wavelength GaAs material system, the integration of gratings with high coupling coefficient κ (as it is perquisite for functional short grating bursts) is challenging [2] and SG-DBR lasers have not been reported until now. Instead V-cavities [3] or multi-branch devices, e.g.…”
mentioning
confidence: 99%
“…Sampled grating (SG) distributed Bragg reflector (DBR) lasers based on InP are well established offering wide tuning ranges around 1.3 and 1.55 µm [1]. For the short wavelength GaAs material system, the integration of gratings with high coupling coefficient κ (as it is perquisite for functional short grating bursts) is challenging [2] and SG-DBR lasers have not been reported until now. Instead V-cavities [3] or multi-branch devices, e.g.…”
mentioning
confidence: 99%