Novel in-Plane Semiconductor Lasers XVII 2018
DOI: 10.1117/12.2287413
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Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers

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“…In [11,12] we presented a technology for GaAs-based lasers, which allows the removal of the active layer in the grating section and the simultaneous embedding of a Bragg grating by several wet-chemical etch processes and a two-step epitaxy. This technology was used for the fabrication of sampled grating (SG) DBR lasers to obtain a wide (20 nm) tunability.…”
mentioning
confidence: 99%
“…In [11,12] we presented a technology for GaAs-based lasers, which allows the removal of the active layer in the grating section and the simultaneous embedding of a Bragg grating by several wet-chemical etch processes and a two-step epitaxy. This technology was used for the fabrication of sampled grating (SG) DBR lasers to obtain a wide (20 nm) tunability.…”
mentioning
confidence: 99%