Oxygen in sputter‐deposited ZnTe thin films

Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour–solid (V–S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep‐level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band‐to‐band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. SEM image and cathodoluminescence emission of needle‐ and pencil‐like TeO2‐doped ZnO microstructures.

show abstract

“…The particular composition of ZnO 1− x Te x can be estimated from the bowing parameter b ≅ 2.7 eV reported in Ref. by using the expression

E (x) = x E_{ZnTe} + (1 - x) E_{ZnO} - b x (1 - x) .

…”

Section: Resultsmentioning

confidence: 99%

Recombination processes in Te‐doped ZnO microstructures

Iribarren

Fernández

Piqueras

2013

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…11 Experiments and calculations have suggested the presence of such an intermediate band in ZnTeO and the quaternary ZnMnTeO. 11 Bandgap reduction in ZnTe with the introduction of oxygen has also been reported by other research groups recently, 12,13 providing further evidence of an intermediate band in this alloy. In this work, the synthesis of ZnTeO thin films by pulsed laser deposition and molecular beam epitaxy is investigated to further examine the possible formation of an intermediate band or alloy system spanning the visible/ultraviolet (UV) spectral region.…”

Section: Introductionmentioning

confidence: 80%

Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy

Wang

Bowen

Spanninga

et al. 2008

Journal of Elec Materi

View full text Add to dashboard Cite

Oxygen incorporation into ZnTe was studied using pulsed laser deposition and molecular beam epitaxy. Oxygen incorporation at the high partial pressures studied for pulsed laser deposition was found to result in increasing visible transparency with oxygen incorporation, and is attributed to the formation of TeO x based on bonding information obtained by x-ray photoelectron spectroscopy measurements. Oxygen incorporation by a plasma source during the growth of ZnTe by molecular beam epitaxy was found to result in an electronic band at 0.5 eV below the ZnTe band edge, possessing strong radiative properties and a resonant-like optical absorption coefficient with a peak a > 5000 cm -1 . The ZnTeO thin films grown by MBE have an epitaxial structure similar to ZnTe, where it is unclear whether the properties are due to the formation of a high-density defect level or the formation of a dilute alloy.

show abstract

“…Therefore, we have first used the band gap values reported in Ref. [25], but obtained b ¼ 4.03 eV, which is significantly lower than expected. This is because of the inaccuracy in oxygen doping concentration in ZnTe film.…”

Section: Density Functional Theorymentioning

confidence: 97%

Ambipolar behavior of Te and its effect on the optical emission of ZnO:Te epitaxial thin film

Sahu

Dileep

Negi

et al. 2015

Phys. Status Solidi B

View full text Add to dashboard Cite

We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3 eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7 eV is obtained for TeO and is in agreement with modified Becke–Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.

show abstract

Oxygen in sputter‐deposited ZnTe thin films

Cited by 17 publications

References 4 publications

Recombination processes in Te‐doped ZnO microstructures

Recombination processes in Te‐doped ZnO microstructures

Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy

Ambipolar behavior of Te and its effect on the optical emission of ZnO:Te epitaxial thin film

Contact Info

Product

Resources

About