Oxygen generation in anodized Ta–Cu alloys

Mato, S.; Alcalá, G.; Skeldon, P.; Thompson, G.E.; Quance, T.; Graham, M. J.; Habazaki, H.; Shimizu, K.; Masheder, D.

doi:10.1080/14786430310000107258

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…Thus, the gold is accumulated in the enriched alloy layer without incorporating into the anodic film to high anodizing potentials [35,36]. In addition to aluminum alloys, accumulation of an alloying element beneath the anodic film was found in magnesium alloys [37], although no obvious enrichment of alloying elements occurred for titanium, zirconium and tantalum alloys [38][39][40]. The present study discloses that even for the formation of fluoride-based anodic films, prior oxidation of magnesium occurs with gold atoms that accumulate in a thin alloy layer beneath the anodic film.…”

Section: Au Tracer Studymentioning

confidence: 99%

Growth of barrier-type anodic films on magnesium in ethylene glycol electrolytes containing fluoride and water

Habazaki

Kataoka

Shahzad

et al. 2015

Electrochimica Acta

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Section: Au Tracer Studymentioning

confidence: 99%

Growth of barrier-type anodic films on magnesium in ethylene glycol electrolytes containing fluoride and water

Habazaki

Kataoka

Shahzad

et al. 2015

Electrochimica Acta

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“…The change in band gap energy of "mixed oxide" with composition is also of fundamental interest [22]. Anodizing of tantalum alloys has been investigated for improving the dielectric properties of anodic Ta 2 O 5 , which is extensively used as a dielectric in the capacitor industry, as well as for increased understanding of the growth mechanism of anodic oxides [23][24][25][26][27][28][29][30][31]. Anodic Nb 2 O 5 formed on niobium is also a promising dielectric for capacitor applications due to the high dielectric constant (ε ox =42) compared with anodic Ta 2 O 5 (ε ox =27) [32,33].…”

Section: Introductionmentioning

confidence: 99%

Growth and field crystallization of anodic films on Ta–Nb alloys

Komiyama

Tsuji

Aoki

et al. 2011

J Solid State Electrochem

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The growth behavior of amorphous anodic films\ud on Ta–Nb solid solution alloys has been investigated over a\ud wide composition range at a constant current density of\ud 50 Am−2 in 0.1 mol dm−3 ammonium pentaborate\ud electrolyte. The anodic films consist of two layers,\ud comprising a thin outer Nb2O5 layer and an inner layer\ud consisting of units of Ta2O5 and Nb2O5. The outer Nb2O5\ud layer is formed as a consequence of the faster outward\ud migration of Nb5+ ions, compared with Ta5+ ions, during\ud film growth under the high electric field. Their relative\ud migration rates are independent of the alloy composition.\ud The formation ratio, density, and capacitance of the films\ud show a linear relation to the alloy composition. The\ud susceptibility of the anodic films to field crystallization\ud during anodizing at constant voltage increases with increasing\ud niobium content of the alloy

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“…Anodizing of tantalum has been studied extensively because of fundamental interest in ionic transport in amorphous oxides 19 as well as practical importance as dielectrics. 1016 The exceptionally high chemical stability of anodic oxide films on tantalum ensures their growth at nearly 100% current efficiency in a wide range of electrolytes and pH.…”

Section: Introductionmentioning

confidence: 99%

Formation and Dielectric Properties of Anodic Films Formed on Ta-W Alloys at Various Formation Voltages

et al. 2013

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Barrier-type anodic films are formed on magnetron sputtered Ta-W alloy films to various formation potentials in 0.1 mol dm −3 ammonium pentaborate electrolyte. The anodic films consist of two layers, comprising an outer thin Ta 2 O 5 layer free from tungsten species and an inner layer containing both tantalum and tungsten species. Slower migration of W 6+ ions with respect to Ta 5+ ions results in the formation of the two-layered films. Because of the absence of more soluble tungsten species in the outer layer, the anodic films grow at high current efficiency. The reciprocal of capacitance of the anodic films changes linearly with formation voltage, as a consequence of linear thickening of the anodic films with the formation potential. The capacitance is enhanced by the addition of tungsten, particularly at low formation potential. The shift of the potential, at which the anodic film growth commences, to the noble direction, contributes to the enhanced capacitance at the low formation voltages.

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Oxygen generation in anodized Ta–Cu alloys

Cited by 3 publications

References 17 publications

Growth of barrier-type anodic films on magnesium in ethylene glycol electrolytes containing fluoride and water

Growth of barrier-type anodic films on magnesium in ethylene glycol electrolytes containing fluoride and water

Growth and field crystallization of anodic films on Ta–Nb alloys

Formation and Dielectric Properties of Anodic Films Formed on Ta-W Alloys at Various Formation Voltages

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