Oxygen diffusion through thin Pt films on Si(100)

Schmiedl, R.; Demuth, Volker; Lahnor, P.; Godehardt, H.; Bodschwinna, Y.; Harder, C.; Hammer, Lutz; Strunk, H. P.; Schulz, M.; Heinz, K.

doi:10.1007/bf01575085

Cited by 86 publications

(57 citation statements)

References 29 publications

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“…Previously, a similar but much stronger density decrease of the Pt layer in Pt/ Ti bilayer electrode upon the annealing was reported and attributed to the strong diffusion of Ti and its following oxidation. 21,22 Though the diffusion at the Pt/ TiO x interface was not strong 6,11 or even undetectable as reported, 18 the limited diffusion and incorporation of Ti and O into Pt have been observed previously [23][24][25][26] and confirmed by scanning transmission electron microscopy. 16 Ti and O can migrate along the grain boundaries of Pt when the sample is annealed.…”

Section: A Formation Of Pt Hillocks On the Bare Pt Electrodesupporting

confidence: 57%

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Cao

Solbach

Klemradt

et al. 2006

Journal of Applied Physics

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Effects of the thermal treatment and the fabrication process of Pb͑Zr 0.3 Ti 0.7 ͒O 3 ͑PZT͒ thin films using chemical solution deposition on Pt/ TiO x electrode stacks were investigated using complementary analytical techniques including atomic force microscopy ͑AFM͒, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and grazing incidence x-ray reflectivity of synchrotron radiation. The surface and interface structures of the Pt/ TiO x electrode stacks with different thermal treatments, and the PZT/ Pt/ TiO x sample were examined. The propagation of Pt hillocks on the bare Pt/ TiO x electrode stacks upon the annealing was observed. AFM observations also revealed that the upper surface of the Pt bottom electrode under PZT thin film became rougher than that of the bare Pt electrode with the same thermal history. Global structural information including the density, surface or interface root-mean-square roughness, and thickness of each constituent layer in the samples were determined using x-ray reflectivity. A density decrease of the Pt layer upon the annealing or during the fabrication of PZT thin films was found from fitting the specular reflectivity, and further confirmed by the negative shift of the Yoneda peak of Pt in the diffuse reflectivity. The formation of Pt hillocks on the bare Pt electrodes was attributed to the compressive stress during the high-temperature annealing caused by the limited incorporation of Ti and O into the Pt layer. Roughening of the PZT/Pt interface was ascribed to the interaction between the compressive stress in Pt and the indentation by the PZT crystallization and grain growth during the annealing.

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Section: A Formation Of Pt Hillocks On the Bare Pt Electrodesupporting

confidence: 57%

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Cao

Solbach

Klemradt

et al. 2006

Journal of Applied Physics

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“…It has been already reported that oxygen diffuses along Pt grain boundaries even at RT. 9,32 Consequently, the reoxidation of the MIM-structure preferentially takes place at the upper interface and will, therefore, lead at the beginning to an increased oxygen content below the Pt electrode thus restoring the Schottky depletion layer. Since the overall resistance of a Pt/STO͑Fe͒/Nb:STO device is dominated by the Schottky depletion layer the fast increase in the resistance can be attributed to this effect.…”

Section: Oxygen Partial Pressure Dependencementioning

confidence: 99%

Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

Menke

Dittmann

Meuffels

et al. 2009

Journal of Applied Physics

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In this work, the results of our detailed investigations on the electroforming procedure in Pt/SrTi0.99Fe0.01O3/SrTi0.99Nb0.01O3 [Pt/STO(Fe)/Nb:STO] metal-insulator-metal (MIM)-devices and its impact on the performance of resistive switching memory devices are presented. Questions about the exact location of the modifications triggered by the electroforming procedure within the investigated MIM-devices will be addressed. From a technological point of view, the thermal stability of formed devices becomes important. An increase in the device resistances during retention measurements has been observed indicating the presence of internal redistribution effects. These may result from an oxygen vacancy gradient induced by the forming process. However, these internal relaxation effects will not end up in the unformed state. Annealing experiments under defined atmospheric conditions allowed distinguishing between internal and external rediffusion effects. We found that SrTiO3 starts to interact with the surrounding atmosphere at moderate temperatures. The occurring external reoxidation effect set the device back to its initial (unformed) state. As a result, the investigated MIM-structures can no longer be regarded as closed systems and presented the large implication on the retention of such devices. The experimental findings are supported by calculations of the penetration depth of oxygen ions/vacancies in SrTiO3.

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“…When the negative bias is applied, the oxygen vacancies are pushed back to the interface and result in LRS. According to the diffusion of oxygen along the Pt grain boundaries, 18 additional oxygen vacancies could be injected from the anode into the BST film during cycling, 19 as sketched in Fig. 3͑b͒, and may cause the degradation depicted in Fig.…”

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confidence: 99%

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Shen¹,

Dittmann²,

Breuer³

et al. 2008

Applied Physics Letters

122

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We compared the resistive switching performance of barium strontium titanate (BST) thin films with tungsten (W) and platinum (Pt) top electrodes, respectively. The yield, endurance, and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop in the resistance for both high and low resistance states, the devices with W top electrode can be switched for 104 times without any obvious degradation. We attribute the improved switching performance to a reversible oxidation and reduction in a WOx layer at the W-BST interface, which was detected by time-of-flight secondary-ion-mass spectroscopy measurements.

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Oxygen diffusion through thin Pt films on Si(100)

Cited by 86 publications

References 29 publications

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

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