Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Shen, Wan Ci; Dittmann, Ralf W.; Breuer, U.; Waser, Rainer

doi:10.1063/1.3039809

Cited by 122 publications

(83 citation statements)

References 21 publications

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“…Since we observed only bipolar switching in epitaxial BST films as reported before 9 and no unipolar switching in epitaxial perovskite systems have been observed so far, grain boundaries have to play a crucial role for the realization of the unipolar switching mode. The importance of grain boundaries in terms of unipolar switching was already demonstrated by Park et al 17 Lee et al 18 also observed that the epitaxial binary oxide NiO shows bipolar switching while the polycrystalline NiO shows unipolar switching.…”

Section: Resultsmentioning

confidence: 64%

“…However, the R off / R on is much smaller compared to our epitaxial BST thin film devices. 9 If the current compliance is increased to 20 mA, another forming occurs at positive branch ͑not shown here͒ and the device is transformed to a better conducting and linear behavior, as can be seen in Fig. 1͑c͒, this linear branch acts as LRS of a unipolar switching state.…”

Section: Resultsmentioning

confidence: 99%

“…9 The larger R off / R on of unipolar switching oxides makes it much more easy to read the memory state 10 and can be potentially integrated in higher density, 11 while generally the bipolar switching has a better endurance.…”

Section: Introductionmentioning

confidence: 99%

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Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Shen

Dittmann

Waser

2010

Journal of Applied Physics

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The alternation from bipolar to unipolar resistive switching was observed in perovskite Ba0.7Sr0.3TiO3 thin films. By controlling the switching voltage, either bipolar or unipolar switching was obtained. When the switching voltage is higher than a threshold voltage, the device exhibits unipolar switching while if the switching voltage is lower than a threshold voltage, the device shows bipolar switching behavior. The bipolar-to-unipolar alternation is dynamically repeatable and may be related to the local modification of broken filaments by oxygen vacancy movement.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

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Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Shen

Dittmann

Waser

2010

Journal of Applied Physics

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“…It is strongly confirmed that oxygen ions are able to move in the TiO 2−x amorphous active layer by a strong external electric field, as reported by other groups. 12,17 Based on above results, the bipolar switching mechanisms of our Al/ TiO 2 / Al devices can be described schematically in Fig. 4͑c͒.…”

Section: Microscopic Origin Of Bipolar Resistive Switching Of Nanoscamentioning

confidence: 99%

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Jeong¹,

Lee²,

Choi³

et al. 2009

Applied Physics Letters

106

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We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

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“…This model can also be used for the RS systems with other metal electrodes such as Al, W, Ta, where AlO x , WO x and TaO x form at the metal/film interface region. [50][51][52][53] The interfacial layer formation is not only related to the Gibbs free energy of oxide formation of metal electrodes, but also with the electrode preparation techniques. For instance, Shang et al [54] and Fujimoto et al [55] used silver paste as the top electrode and found that the Ag(paste)/La 0.7 Ca 0.3 MnO 3 interface exhibit an obvious I-V hysteresis and a stable RS property.…”

Section: Interfacial-layer-type Rsmentioning

confidence: 99%

Resistance switching in oxides with inhomogeneous conductivity

Shang¹,

Sun²,

Shen³

et al. 2013

Chinese Phys. B

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Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon-and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Sibased complementary-metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e. resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes a faster product development as well as an accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed.

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Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Cited by 122 publications

References 21 publications

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Resistance switching in oxides with inhomogeneous conductivity

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