Oxygen Control Challenge for Advanced Wet Processing

Abstract

A control of Dissolved Oxygen (DO) in liquids and oxygen concentration in ambient atmosphere for semiconductor processing is described. The effects of low DO in wet processing for galvanic corrosion and water mark formation were evaluated using various oxygen concentration conditions with HF or HCl mixtures. It was found that the low DO concentration condition (25ppb) prevented the occurrence of defects (voiding, trenching or water marks). The results from processing a device sample showed that low DO concentration condition is required for advanced CMOS processing.

Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process

“…Although, decomposition and analysis method of the H 2 O 2 in the UPW have been reported, no studies have ever tried to evaluate its impact on the cleaning process especially for using 300mm wafer [3]. In this paper we have evaluated the impact of water quality on an HF last process because it offers a sensitive test vehicle for evaluating drying performance [4]. In addition HF last process performance has been evaluated by epitaxy since SiGe-on-Si epitaxy is very sensitive to the surface cleanliness prior to epitaxy [5].…”