Oxygen and lattice distortions in multicrystalline silicon

Möller, Hans Joachim; Funke, Claudia; Lawerenz, A.; Riedel, S.; Werner, Martina

doi:10.1016/s0927-0248(01)00188-x

Cited by 55 publications

(30 citation statements)

References 8 publications

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“…6(a)]. This result is consistent with stress measurements in EFG silicon ribbons and tri-crystal silicon carried out by Möller and co-workers, 21 who have associated local high stresses with high density of single slip dislocations that accumulate near grain and twin boundaries.…”

Section: -3supporting

confidence: 89%

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

Brito

Pereira

Alves

et al. 2004

Review of Scientific Instruments

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This article reports on a method for the measurement of residual stress in multicrystalline silicon ribbons, based on the infrared photoelastic technique. This self-calibrating method allows the in situ determination of the photoelastic coefficients and can thus be used for any crystal orientation. The method was validated by the experimental determination of the photoelastic coefficient of monocrystalline (100) silicon wafers and by comparison with strain measurements using asymmetrical x-ray diffraction. The distribution of residual stress in multicrystalline silicon ribbons was also measured. The results showed strong evidence for tensile stress in the central region and compressive stress near the edges of the ribbons. Both the measured residual stress and the photoelastic coefficient distributions are correlated to grain boundaries.

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Section: -3supporting

confidence: 89%

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

Brito

Pereira

Alves

et al. 2004

Review of Scientific Instruments

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“…For wafers with interstitial oxygen concentrations well above 2 ϫ 10 17 cm −3 as found in the bottom regions of mc-Si blocks, Möller et al 51 reported that oxygen precipitation not only occurs at dislocations but also homogenously distributed in the bulk. Thus, solar cells made out of oxygen-rich mc-Si wafers should show a homogeneous subband-gap luminescence emission superimposed by a stronger emission at dislocations sites.…”

Section: B Experimental Results and Discussionmentioning

confidence: 99%

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen.

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“…1 Such precipitates also form in mc-Si wafers. 9,13 We have recently shown a strong correlation between the quantity of iron segregated to the oxide precipitates and associated defects (surrounding dislocations and stacking faults) and the resulting recombination activity. 5 As solar silicon is at risk of contamination by transition metal impurities from the crucible or during cell processing, it is important to understand how the interaction of impurities with oxide precipitates evolves during cell processing.…”

Section: Introductionmentioning

confidence: 99%

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Murphy

McGuire

Bothe

et al. 2014

Journal of Applied Physics

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Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. Injection-dependent minority carrier lifetime measurements are analysed to provide quantitative information on the degree to which the precipitates and associated defects are decorated with iron impurities. These data are correlated with bulk iron measurements based on the photodissociation of FeB pairs. Iron in the vicinity of oxide precipitates in samples with relatively low levels of bulk iron contamination (< 5 × 1012 cm−3) can be gettered to some extent. Higher levels of bulk iron contamination (> 1.2 × 1013 cm−3) result in irreversible behaviour, suggesting iron precipitation in the vicinity of oxide precipitates. Bulk iron is preferentially gettered to the phosphorus diffused layer opposed to the oxide precipitates and associated defects.

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Oxygen and lattice distortions in multicrystalline silicon

Cited by 55 publications

References 8 publications

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

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