Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Murphy, John D.; McGuire, R. E.; Bothe, Karsten; Voronkov, V. V.; Falster, R.

doi:10.1063/1.4892015

Cited by 23 publications

(13 citation statements)

References 32 publications

(63 reference statements)

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“…An important uncertainty to the actual iron content is given by the drive-in diffusion after implantation. A loss of iron could occur via segregation in the growing oxide (gettering) or in the etched surface region [11]. Also precipitation of iron could occur [11], resulting in iron that is not detectable via lifetime evaluations, since precipitated iron does not take part in the metastable defect state change [12].…”

Section: Resultsmentioning

confidence: 99%

“…A loss of iron could occur via segregation in the growing oxide (gettering) or in the etched surface region [11]. Also precipitation of iron could occur [11], resulting in iron that is not detectable via lifetime evaluations, since precipitated iron does not take part in the metastable defect state change [12]. Another reason for a lower iron content is gettering in the surface passivation layer [13].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Re-evaluation of the SRH-parameters for the FeGa defect

Post

Niewelt

Yang

et al. 2019

15th International Conference on Concentrator Photovoltaic Systems (CPV-15)

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In this work the existing SRH parametrizations for the FeGa defect are re-evaluated by a deliberately iron contaminated sample set of varied doping densities. The evolution of the cross-over point is analyzed for this aim, due to its characteristic dependency on the defect parameters of the metastable iron states. It can give insight into the defect parameter, whilst being independent of most factors usually limiting evaluations precision. The proposed parameter adjustment provides an improved description of the measurement data compared to the literature parametrizations.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Re-evaluation of the SRH-parameters for the FeGa defect

Post

Niewelt

Yang

et al. 2019

15th International Conference on Concentrator Photovoltaic Systems (CPV-15)

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“…It is known that OPs can act as internal gettering sites for metallic impurities, effectively increasing the precipitation of transition metal impurities (such as Fe). [21,22] Such impurity-decorated OPs and transition metal impurities (both in the dissolved and precipitated states) also act as effective recombination centers in p-type silicon. [23,24] 2.2.…”

Section: Srh Lifetimes Due To Fega Pairsmentioning

confidence: 99%

Investigating Wafer Quality in Industrial Czochralski‐Grown Gallium‐Doped p‐Type Silicon Ingots with Melt Recharging

Basnet

Sun²,

et al. 2023

Solar RRL

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Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as‐grown state, the ingots contain interstitial iron concentrations in the range of 3 × 109–2 × 1010 cm−3, with a trend of slightly higher concentrations toward the tail end of each ingot, and in subsequently grown ingots. However, analysis of the effective lifetimes indicates that iron–gallium pairs are not the dominant recombination centers in the as‐grown state. Moreover, when these wafers are subjected to a tabula rasa step, an increase in the iron concentration is observed in the range of 1 × 1010–6 × 1010 cm−3, with iron–gallium pairs becoming the dominant recombination centers. This is possibly caused by the dissolution of pre‐existing precipitated iron in the wafers. Nevertheless, the negative impact of iron contamination can be dramatically reduced by subjecting the wafers to a phosphorus diffusion gettering step, as is commonly incorporated in the fabrication of p‐type passivated emitter and rear cells. Therefore, it is concluded that the quality of the ingots is not limited by iron contamination, even after multiple ingots are pulled from the recharged melt.

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“…The strain-enhanced diffusion phenomenon is analogous to the diffusion of metals atoms that occurs during the internal gettering process often employed for the integrated circuit manufacturing[53,54,55] …”

mentioning

confidence: 99%

Glass alteration in the process of long-term corrosion caused by internal stress: A comparative study of degraded and intact domains in 19th century semi-opaque turquoise glass seed beads using micro-FTIR spectroscopy and SEM

Kadikova¹,

Yuryeva²,

Morozova³

et al. 2022

Preprint

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Intact and degraded domains are analysed in the same glass beads using FTIR and SEM • Glass depolymerizes in degraded domains and does not depolymerize in intact ones • Alkali elements migrate from degraded domains to intact ones due to internal stress • Internal stresses drive glass depolymerization, bleaching, cracking and fragmenting • Atomic-level thermal fluctuation mechanism of glass stress corrosion is discussed

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Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Cited by 23 publications

References 32 publications

Re-evaluation of the SRH-parameters for the FeGa defect

Re-evaluation of the SRH-parameters for the FeGa defect

Investigating Wafer Quality in Industrial Czochralski‐Grown Gallium‐Doped p‐Type Silicon Ingots with Melt Recharging

Glass alteration in the process of long-term corrosion caused by internal stress: A comparative study of degraded and intact domains in 19th century semi-opaque turquoise glass seed beads using micro-FTIR spectroscopy and SEM

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