Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

Jolly, Florence; Rochet, F.; Dufour, G.; Grupp, C.; Taleb‐Ibrahimi, A.

doi:10.1016/s0022-3093(00)00370-7

Cited by 53 publications

(59 citation statements)

References 18 publications

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“…[ 11 , 49 ] The shift of Si(0) binding energy probably results from different oxidation state of materials. [ 50 ] It is clear that Si is partially oxidized after carbon coating even under Ar atmosphere (Grade 5.0 Ar is used), consistent with previous fi ndings. [ 51 ] The key difference between Si-1100-620 and Si-1100-800 is that, as carbon coating temperature increases, the intensity of the SiO x region decreases and the intensity of the Si(4 + ) peak (corresponding to SiO 2 ) increases relative to the intensity of the Si(0) peak, which may be due to disproportionation of SiO x and/or its reduction by acetylene.…”

Section: Full Papersupporting

confidence: 90%

Influence of Silicon Nanoscale Building Blocks Size and Carbon Coating on the Performance of Micro‐Sized Si–C Composite Li‐Ion Anodes

Dai

Gordin

et al. 2013

Advanced Energy Materials

177

153

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Silicon has been intensively pursued as the most promising anode material for Li‐ion batteries due to its high theoretical capacity of 3579 mAh/g. Micro‐sized Si–C composites composed of nanoscale primary building blocks are attractive Si‐based anodes for practical application because they not only achieve excellent cycling stability, but also offer both gravimetric and volumetric capacity. However, the effects of key parameters in designing such materials on their electrochemical performance are unknown and how to optimize them thus remains to be explored. Herein, the influence of Si nanoscale building block size and carbon coating on the electrochemical performance of the micro‐sized Si–C composites is investigated. It is found that the critical Si building block size is 15 nm, which enables a high capacity without compromising the cycling stability, and that carbon coating at higher temperature improves the first cycle coulombic efficiency (CE) and the rate capability. Corresponding reasons underlying electrochemical performance are revealed by various characterizations. Combining both optimized Si building block size and carbon coating temperature, the resultant composite can sustain 600 cycles at 1.2 A/g with a fixed lithiation capacity of 1200 mAh/g, the best cycling performance with such a high capacity for micro‐sized Si‐based anodes.

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Section: Full Papersupporting

confidence: 90%

Influence of Silicon Nanoscale Building Blocks Size and Carbon Coating on the Performance of Micro‐Sized Si–C Composite Li‐Ion Anodes

Dai

Gordin

et al. 2013

Advanced Energy Materials

177

153

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“…16 As a dielectric material, a-SiO 2 thin films are also used as a planar capacitor in the traditional metal-oxide-semiconductor (MOS) structure. 17 Due to the importance of the amorphous thin film in a variety of applications, several recent studies on thermal/phonon transport across crystallinejamorphous heterojunctions were carried out. [18][19][20] Specifically, Deng et al 19 studied phonon transport across a Sija-SiO 2 jSi structure using a phonon wave packet (WP) method and found that the phonon transmission coefficient decreases almost monotonically with increasing phonon frequency.…”

Section: Introductionmentioning

confidence: 99%

Phonon interference in crystalline and amorphous confined nanoscopic films

Liang

Wilson

Keblinski

2017

Journal of Applied Physics

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Using molecular dynamics phonon wave packet simulations, we study phonon transmission across hexagonal (h)-BN and amorphous silica (a-SiO 2 ) nanoscopic thin films sandwiched by two crystalline leads. Due to the phonon interference effect, the frequency-dependent phonon transmission coefficient in the case of the crystalline film (Sijh-BNjAl heterostructure) exhibits a strongly oscillatory behavior. In the case of the amorphous film (Sija-SiO 2 jAl and Sija-SiO 2 jSi heterostructures), in spite of structural disorder, the phonon transmission coefficient also exhibits oscillatory behavior at low frequencies (up to $1.2 THz), with a period of oscillation consistent with the prediction from the two-beam interference equation. Above 1.2 THz, however, the phonon interference effect is greatly weakened by the diffuse scattering of higher-frequency phonons within an a-SiO 2 thin film and at the two interfaces confining the a-SiO 2 thin film. Published by AIP Publishing.

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“…1͒. 12 Although there is still some disagreement as to the origin of each component, as well as suggestions of the existence of additional components, [13][14][15][16] the main peak located at around 0.0 eV relative binding energy is accepted as that of elemental Si ͑Si 0 ͒ and that at 4.4 eV as that of the stoichiometric oxide ͑Si 4+ ͒. From the measured ratio of Si 4+ intensity to Si 0 intensity and previous analyses of experimental data 4,12,16 that yield the electron inelastic mean free path in the oxide at our energy as 9.8 Å and the ratio of intensities from pure bulk Si and pure bulk SiO 2 as 1.47, the thickness of stoichiometric oxide can be calculated.…”

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confidence: 99%

Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Enta

Mun

Rossi

et al. 2008

Applied Physics Letters

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Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

Cited by 53 publications

References 18 publications

Influence of Silicon Nanoscale Building Blocks Size and Carbon Coating on the Performance of Micro‐Sized Si–C Composite Li‐Ion Anodes

Influence of Silicon Nanoscale Building Blocks Size and Carbon Coating on the Performance of Micro‐Sized Si–C Composite Li‐Ion Anodes

Phonon interference in crystalline and amorphous confined nanoscopic films

Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

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