Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Enta, Yoshiharu; Mun, Bongjin Simon; Rossi, Massimiliano; Ross, Philip N.; Hussain, Zahid; Fadley, C. S.; Lee, Ki-Suk; Kim, Sang‐Koog

doi:10.1063/1.2830332

Cited by 42 publications

(42 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Current models for the reaction kinetics of this process do not describe this regime of thicknesses that is now crucially important in devices. [92] Looking ahead concerning ambient pressure XPS, we expect that much shorter timescales in the millesecond range and significantly better energy resolutions than those in Fig. 26(c) should be possible with brighter radiation sources, higher throughput spectrometers, and more efficient multichannel detectors that are under development.…”

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

“…In this way, surface reactions can be studied at pressures that in some cases are much closer to the actual conditions of industrial processes or systems of relevance to environmental science, thus bridging what has been called the 'pressure gap' between ultrahigh vacuum surface science research and real-world reaction conditions, and leading to the term 'ambient pressure XPS (APXPS). [88,92] As an example of the use of such a system, Fig. 26(c) shows several spectra from a very recent Si oxidation study at 450 C and 1 torr which is of direct relevance to the processing conditions used in the semiconductor industry.…”

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

“…26(c) shows several spectra from a very recent Si oxidation study at 450 C and 1 torr which is of direct relevance to the processing conditions used in the semiconductor industry. [92] Spectra here were recorded every 8 s, compared to every 15 s in Fig. 4, but they are shown here only about every minute.…”

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

See 2 more Smart Citations

Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Fadley

2008

Surface & Interface Analysis

Self Cite

View full text Add to dashboard Cite

In this overview, the basic concepts of core and valence photoelectron spectroscopy (photoemission), photoelectron diffraction, and photoelectron holography are introduced. Then some current developments in these techniques that should enhance their utility for atomic-level characterization of new materials and surface chemical processes are discussed, including measurements with hard X-ray excitation, standing-wave excitation, and ambient pressures in the multi-torr regime.

show abstract

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

Section: Photoemission With Space and Time Resolution And At Higher Pmentioning

confidence: 99%

See 1 more Smart Citation

Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Fadley

2008

Surface & Interface Analysis

Self Cite

View full text Add to dashboard Cite

show abstract

“…• C. [95,96] Such high-pressure studies, both with SR and laboratory X-ray sources, and with variable takeoff angle so as to provide the additional information from ARXPS, thus open the way to studying surface reactions under much more realistic conditions.…”

Section: Some New Directions In Angle-resolved Xps: Standing Wave (Swmentioning

confidence: 99%

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

Herrera-Gómez

Grant

Cumpson

et al. 2009

Surface & Interface Analysis

View full text Add to dashboard Cite

Keywords: X-ray photoelectron spectroscopy; angle-resolved X-ray photoelectron spectroscopy; surface analysis; near-surface analysis; non-destructive depth profiling; maximum entropy; stratification; IUVSTA workshop; XPS; ARXPS; hard X-ray photoemission Introduction X-ray photoelectron spectroscopy is an established technique for the analysis of homogeneous surfaces. [1] Surfaces that are laterally inhomogeneous are analyzed ideally using other instruments that would be capable of measuring such lateral inhomogeneities. Changes in concentration with depth from the surface pose other challenges in determining the depth distribution of elements or the depth profile. For regions greater than 10 nm in depth from the surface, sputter depth profiling with an inert gas is the most commonly used method. This removes layers by sputtering, exposing new surfaces that are measured sequentially. Some problems with sputter depth profiling are (i) preferential sputtering of one element compared with another, (ii) sputterinduced changes in chemistry of compounds, (iii) intermixing between layers, (iv) changes in electrical charging when sputtering non-conducting materials and (v) roughening of the surface due to sputtering. Other techniques such as Rutherford Backscattering Spectrometry or backside Secondary Ion Mass Spectroscopy are also often used for depth profiling, but in general, they suffer from poor depth resolution and chemical specificity. However, the near-surface region is often of particular interest, and this region poses its own challenges for determining its depth distribution of elements. It is this region where Angle-Resolved * Correspondence to: A. Queretaro 76000, 841Report on ARXPS Workshop Fig. 1). Experts from the major equipment manufacturers were also invited to participate. The experts who attended the workshop came from 23 countries, all of which were member countries of IUVSTA, throughout Asia, Europe and North America.The goals of the workshop were to review and discuss the present limits of ARXPS, to discuss ways of acquiring and analyzing ARXPS data, to discuss the applications of ARXPS and to consider future developments in ARXPS. The scientific program of the workshop was arranged by A. Herrera-Gomez, J.T. Grant, P. Cumpson and M. Jenko. Registration, accommodation, meals and transportation were arranged by the Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales. The Local Committee was formed by Martín Yáñez-Limón (CINVESTAV-Querétaro), Wilfrido Calleja (INAOE-Puebla), Juan Luis Peña (CINVESTAV-Merida), with Diana Garcia Sotelo being the Workshop Secretary.Most of the workshop program was based on 1-h presentations followed by 20-min discussion. There were 21 invited reviews of specific topics and additional presentations by experts from the equipment manufacturers on their approaches for ARXPS. There were evening poster sessions where research areas using ARXPS were discussed at length. The workshop ran from 9 : 00 a.m. on Monday through 10 : 00 p.m. on Friday. There were ...

show abstract

“…15 However, in order to have an adequate comparison between these two processes, a more detailed approach needs to be taken, since there are several factors that differentiate them: the higher density of dry oxide, the presence of hydrogen desorption in wet oxidation, and different delays in the diffusion of the oxidant due to strain effects at the interfaces. Of course, pressure dependence of the wet oxide growth rate also needs to be considered.…”

Section: Fig 2 High-resolution Xps Scans At 450°cmentioning

confidence: 99%

In situ observation of wet oxidation kinetics on Si(100) via ambient pressure x-ray photoemission spectroscopy

Rossi

Mun

Enta

et al. 2008

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The initial stages of wet thermal oxidation of Si(100)−(2×1) have been investigated by in situ ambient pressure x-ray photoemission spectroscopy, including chemical-state resolution via Si 2p core-level spectra. Real-time growth rates of silicon dioxide have been monitored at 100 mTorr of water vapor. This pressure is considerably higher than in any prior study using x-ray photoemission spectroscopy. Substrate temperatures have been varied between 250 and 500 °C. Above a temperature of ∼400 °C, two distinct regimes, a rapid and a quasisaturated one, are identified, and growth rates show a strong temperature dependence which cannot be explained by the conventional Deal-Grove model.

show abstract

Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Abstract: Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

Cited by 42 publications

References 19 publications

Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

In situ observation of wet oxidation kinetics on Si(100) via ambient pressure x-ray photoemission spectroscopy

Contact Info

Product

Resources

About