Noise in Nanoscale Semiconductor Devices 2020
DOI: 10.1007/978-3-030-37500-3_17
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Oxide Trap-Induced RTS in MOSFETs

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Cited by 2 publications
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“…Also, it is important to notice that while noise usually is undesirable, it can give valuable information. Noise spectroscopy and random telegraph signal (RTS) analysis is commonly used to study the oxide interface traps in field-effect transistors, and 1/ f noise spectroscopy was already used to study the diffusion of Ne atoms on the graphene surface at cryogenic temperatures . Noise can also be used as a parameter for substance identification and to create single-device electronic noses .…”
Section: Introductionmentioning
confidence: 99%
“…Also, it is important to notice that while noise usually is undesirable, it can give valuable information. Noise spectroscopy and random telegraph signal (RTS) analysis is commonly used to study the oxide interface traps in field-effect transistors, and 1/ f noise spectroscopy was already used to study the diffusion of Ne atoms on the graphene surface at cryogenic temperatures . Noise can also be used as a parameter for substance identification and to create single-device electronic noses .…”
Section: Introductionmentioning
confidence: 99%