Oxide‐TFT technologies for next‐generation AMOLED displays

Arai, Toshiaki

doi:10.1889/jsid20.3.156

Cited by 90 publications

(73 citation statements)

References 17 publications

(24 reference statements)

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“…For large OLEDs, it is unrealistic to use low-temperature polycrystalline silicon (LTPS) TFTs for backplanes. Only oxide TFTs, as represented by a-In-Ga-Zn-O (a-IGZO) (7), are practical candidates for the backplane (8,9). The current small OLEDs use normal-type structures combined with p-channel LTPS TFTs.…”

mentioning

confidence: 99%

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Hosono

Kim

Yoshitake

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

115

112

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Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm 2 /(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.inverted OLEDs | electron injection | electron transport | amorphous oxide semiconductor | low work function material E lectronic and photonic devices based on organic semiconductors have attracted much attention due to their intrinsic characteristics that are difficult to achieve in inorganic semiconductors, such as flexibility and the capability of precise molecular design of active organic layers (1-3). However, organic devices suffer from the material properties that organic semiconductors in general have: rather high lowest unoccupied molecular orbital (LUMO) levels and low electron mobilities, such as 10 −6 to 10 −3 cm 2 /(V·s). This leads to inefficiency in electron injection/transport between an electrode and an organic active layer and a large energy loss. In other words, the creation of materials suitable for efficient electron injection layers (EILs) and electron transport layers (ETLs), with very low work functions, reasonable chemical stability, and high electron mobility, should lead to organic devices with improved performance.Organic light-emitting diodes (OLEDs) are regarded as nextgeneration flat-panel displays (4). Although small high-resolution OLED displays are used widely for smart phones/tablets, and large televisions are being commercialized, several issues still remain, such as lifetime, image sticking, power consumption, and production cost (5). The recent high-resolution OLED pixels (6) with reduced aperture ratios [areal ratio of thin-film transistor (TFT) to pixel] raise the importance of the top emissiontype structure for practical use. For large OLEDs, it is unrealistic to use low-temperature polycrystalline silicon (LTPS) TFTs for backplanes. Only oxide TFTs, as represented by a-In-Ga-Zn-O (a-IGZO) (7), are practical candidates for the backplane (8, 9). The current small OLEDs use normal-type structures combined with p-channel LTPS TFTs. However, only n-channel TFTs are possible for oxide TFTs in actual applications. Simple substitution of the p-channel LTPS TFTs wi...

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mentioning

confidence: 99%

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Hosono

Kim

Yoshitake

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

115

112

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“…Secondly, because all the Δ V th values in a panel are nearly equal even though V th values may vary, the driver IC does not need a wide sensing range and can have a higher voltage resolution. That is particularly important for oxide TFTs, which deteriorate faster than LTPS TFTs . In addition, because source node voltages at the saturation time in Fig.…”

Section: Compensation Technologiesmentioning

confidence: 99%

Advanced compensation technologies for large‐sized UHD OLED TVs

Takasugi¹,

Shin²,

Chang³

et al. 2016

J Soc Info Display

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“…for Thin-Film Transistors mobility of 20-50 cm 2 V −1 s −1 [4]. In addition, the long-term stability of IGZO-TFTs under bias stress and light illumination is still a critical issue to be solved [5].…”

Section: Effects Of Nd In Nd X In 1−x O 3 Semiconductorsmentioning

confidence: 99%

Effects of Nd in Nd<italic>x</italic>In1-<italic>x</italic>O3 Semiconductors for Thin-Film Transistors

Lan

Song

Lin

et al. 2015

IEEE Trans. Electron Devices

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Thin-film transistors (TFTs) with neodymiumsubstituted indium oxide [Nd x In 1−x O 3 (NIO)] semiconductor were fabricated. It was found that NIO films with higher annealing temperature have higher film quality and higher mobility; and NIO films with higher Nd concentration have higher coordination number of In, indicating fewer oxygen vacancies and lower free carrier density. TFTs with different Nd concentration exhibited good electrical stability under positive gate-bias stress, but the ones with lower Nd concentration (5%) displayed much poorer stability under negative gate-bias stress (NBS) compared with those with higher Nd concentration (15% and 25%). Detailed studies showed that the charge transfer satellite with the electron configuration of |Nd3d 5 5/2 4 f 4 O2 p −1 , which originates from the O2 p → Nd4 f charge transfer process, was the main reason for poor NBS stability for TFTs with 5% Nd, because it favored a 4 f n+l /4 f n couple formation, resulting in the formation of donor/acceptor states, which will affect the electrical stability.Index Terms-Indium oxide, oxide semiconductor, thin-film transistor (TFT).

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Oxide‐TFT technologies for next‐generation AMOLED displays

Cited by 90 publications

References 17 publications

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Advanced compensation technologies for large‐sized UHD OLED TVs

Effects of Nd in Nd<sub><italic>x</italic></sub>In<sub>1-<italic>x</italic></sub>O<sub>3</sub> Semiconductors for Thin-Film Transistors

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