Oxidation treatment on Ni/Au Ohmic contacts to p‐type GaN

Chen, Z. Z.; Qin, Zhixin; Hu, Xiaopeng; Yu, Tongjun; Zhang, B.; Yang, Zhijian; Tong, Y.Z.; Ding, Xiao Pan; Zhang, G. Y.

doi:10.1002/pssc.200303471

phys. stat. sol. (c)

2003

DOI: 10.1002/pssc.200303471

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Oxidation treatment on Ni/Au Ohmic contacts to p‐type GaN

Z. Z. Chen

Zhixin Qin

Xiaopeng Hu

et al.

Abstract: PACS 73.40.Cg, 73.61.Ey Current-voltage (I-V) characteristics, transmission line method (TLM), and optical transmittance measurements are performed to investigate the effects of thermal oxidation and plasma-induced oxidation treatments on Ni/Au contacts to p-type GaN. Whether oxidation and thermal annealing are performed simultaneously or in succession, the specific contact resistances of Au/Ni/p-GaN are reduced. As to plasmainduced oxidation, neither no-oxidation nor long-time oxidation treatments on Ni/Au la… Show more

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Cited by 3 publications

References 15 publications

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A novel prognosis and segmentation of necrosis (dead cells) in contrast enhanced T1‐weighted glioblastoma tumor with automatic contextual clustering

Arunachalam¹,

Savarimuthu²

2018

Int J Imaging Syst Tech

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In recent years, mortality rate with high-grade tumor has been increased significantly especially with glioblastoma (GBM) brain tumor while compared to other malignant brain tumor. Here, the amount of dead cells accommodated with the tumor tissue in GBM brain tumor play a vital task and necessitate an earlier diagnosis of malignancy with the GBM tumor. It inspires to implement new automatic diagnosis system which detects the dead cells and tumor tissue with the GBM brain tumor, such that the survival rate of the diseased can easily be prognosis by the Radiologist and Neurosurgeon. The main objective of this article is to detect the amount of dead cells with respect to tumor tissue associated with the GBM brain tumor which desires the impact factor of the brain tumor. In this framework, initially, the new contrast enhancement modality is incorporated to enhance the gray information over the dead cells and the tumor tissue with the T1-weighted MRI GBM brain tumor. In this enhancement, the edges of the tumor cells and its dead cells are magnified efficiently. As the noises and outliers with MR image is unpredictable and it experiences the variable amount of noises over the local window, the contextual information over each pixel of the image is adaptively modified with respect to the amount of noise over local window using adaptive contextual clustering. The performance evaluation of the framework is investigated which exhibits the overwhelming result compared to conventional detection techniques.

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A novel prognosis and segmentation of necrosis (dead cells) in contrast enhanced T1‐weighted glioblastoma tumor with automatic contextual clustering

Arunachalam¹,

Savarimuthu²

2018

Int J Imaging Syst Tech

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Effects of oxidation by O2 plasma on formation of Ni∕Au ohmic contact to p-GaN

Chen

Qin

Tong

et al. 2004

Journal of Applied Physics

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Oxidation of Ni∕Au (5nm∕10nm) contact to p-GaN layer was performed by O2 plasma in a reactive ion etching system. The structural characteristics of the Ni∕Au p-GaN for different oxidation time were investigated by x-ray diffraction (XRD) measurements, using an intense synchrotron x-ray source. The XRD measurements indicated that the grains of nickel oxide polycrystalline in the contact were grown continually when the oxidation time increased in 10min. However, Au showed amorphouslike and the intensities of Bragg diffraction peaks were hardly changed when oxidation time increased to 10min. The nickel oxide formed by O2 plasma without sequent thermal annealing did not reduce the specific contact resistance (ρc) to p-GaN, but it took an important role in lowering ρc followed by thermal annealing in N2 at 500°C for 10min. Optical transmission spectra confirmed that the nickel was easy to be oxidized and few interdiffusions occurred at the metal interface in O2 plasma ambient. Finally, the mechanism of oxidation on the formation of low ρc ohmic contact was also discussed.

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Photogated transistor of III-nitride nanorods

Seo

Chen

et al. 2010

Applied Physics Letters

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A III-nitride-based photogated transistor using photons to control the channel width of an otherwise gateless field effect transistor (FET) is investigated. This is accomplished by stacking sequential layers of p-GaN/InGaN/n-GaN on a Si substrate in an array of nanorods. The nitride p-i-n diode can be activated by light, whereupon the nanorod device shows phototransistor characteristics in forward bias but behaves like a photoconductor when in reverse bias. An optically pumped FET model, as justified by the low-dimensional nanogeometry, is used in analysis of the device. The resulting photogate efficiency and photocarrier mobilities are estimated to be ∼0.04 V/(W/cm2) and, ∼2000–3000 cm2/V s, respectively.

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Oxidation treatment on Ni/Au Ohmic contacts to p‐type GaN

Cited by 3 publications

References 15 publications

A novel prognosis and segmentation of necrosis (dead cells) in contrast enhanced T1‐weighted glioblastoma tumor with automatic contextual clustering

A novel prognosis and segmentation of necrosis (dead cells) in contrast enhanced T1‐weighted glioblastoma tumor with automatic contextual clustering

Effects of oxidation by O2 plasma on formation of Ni∕Au ohmic contact to p-GaN

Photogated transistor of III-nitride nanorods

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