1972
DOI: 10.1149/1.2404041
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Oxidation State of Anodic Tantalum Oxide after Heat-Treatment

Abstract: During heat-treatment of anodic Ta205 in vacuum (10 -5 Torr) at temperatures in the range from 200 ~ to 700~ oxygen exchange between the anodic oxide, the Ta substrate, and the atmosphere was observed. Galvanostatic reanodization experiments resulted in potential-time (charge) curves which could be used to determine the oxidation state of heat-treated TaOn as a function of the distance from the electrolyte/oxide interface into the oxide. Profiles of the oxidation state across the oxide were measured for tantal… Show more

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Cited by 11 publications
(9 citation statements)
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“…The 20th century research on ATO structures was primarily dedicated to the understanding optical interference effects (coloring effect) and capacitance–voltage relations with respect to the formed oxide thickness. , In most cases, a two-component anodizing solution, comprising various concentrations of H 2 SO 4 , Na 2 SO 4 , H 3 PO 4 , HCl, NaBF 4 , citric acid, etc., in water was utilized for the formation of ATO structures. ,, ,,,,, The anodizing potential was maintained below the dielectric breakdown potential, typically up to 300 V, resulting in the formation of a uniform, compact, and amorphous ATO layer. In 2005, I. Sieber et al reported, for the first time, the formation of porous ATO layer by anodizing Ta foil in a 1 M H 2 SO 4 electrolyte containing a small amount of HF (0.1–3 wt %). , The anodizing potential was ramped from E ocp to 20 V at 10 mV s –1 , resulting in an observed ATO layer thickness of about 130 nm (Figure a) .…”
Section: Anodization Of Tantalummentioning
confidence: 99%
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“…The 20th century research on ATO structures was primarily dedicated to the understanding optical interference effects (coloring effect) and capacitance–voltage relations with respect to the formed oxide thickness. , In most cases, a two-component anodizing solution, comprising various concentrations of H 2 SO 4 , Na 2 SO 4 , H 3 PO 4 , HCl, NaBF 4 , citric acid, etc., in water was utilized for the formation of ATO structures. ,, ,,,,, The anodizing potential was maintained below the dielectric breakdown potential, typically up to 300 V, resulting in the formation of a uniform, compact, and amorphous ATO layer. In 2005, I. Sieber et al reported, for the first time, the formation of porous ATO layer by anodizing Ta foil in a 1 M H 2 SO 4 electrolyte containing a small amount of HF (0.1–3 wt %). , The anodizing potential was ramped from E ocp to 20 V at 10 mV s –1 , resulting in an observed ATO layer thickness of about 130 nm (Figure a) .…”
Section: Anodization Of Tantalummentioning
confidence: 99%
“…Subsequent efforts were made to understand the rate controlling step and the movement/migration of metal ions during the anodic oxide growth on Ta. , For example, B. Verkerk et al investigated the mechanism of tantalum oxide growth utilizing radioactive labeling techniques. In 1972, E. Gunzel examined the anodization of Ta in electrolytes, such as chromic acid, phosphoric acid, sulfuric acid, and citric acid with variations in concentrations. This study suggested, for the first time, the possibility of incorporation of sulfur and phosphorus from electrolytes into the anodic oxide layer.…”
Section: Anodization Of Tantalummentioning
confidence: 99%
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